4.4 Article

Potentiostatic deposition of Cu2O films as p-type transparent conductors at room temperature

期刊

THIN SOLID FILMS
卷 616, 期 -, 页码 760-766

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2016.10.005

关键词

Cu2O; Electrodeposition; Film thickness; Characterization; Optical properties

资金

  1. Ministry of Higher Education-Egypt [00120805]

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Single phase Cu2O films have been prepared via an electrodeposition technique onto ITO glass substrates at room temperature. Likewise, Cu2O films were deposited using a potentiostatic process from an alkaline electrolyte containing copper (II) nitrate and 1 M sodium citrate. Single phase Cu2O films were electrodeposited at a cathodic deposition potential of -500 mV for a reaction period of 90 min, and pH of 12 to yield a film thickness of 0.49 mu m. The mechanism for nucleation of Cu2O films was found to vary with deposition potential. Applying the Scharifi

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