期刊
THIN SOLID FILMS
卷 605, 期 -, 页码 77-83出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.09.033
关键词
ZnO; Surface acoustic wave; Interdigital transducer electrodes; Ultraviolet sensor
类别
资金
- Ministry of Science and Technology, Taiwan, ROC [NSC 101-2221-E-366-004, NSC 102-2221-E-366-002, MOST 103-2221-E-366 -006]
This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. (C) 2015 Elsevier B.V. All rights reserved.
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