Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

标题
Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
作者
关键词
-
出版物
Chinese Physics B
Volume 24, Issue 7, Pages 077307
出版商
IOP Publishing
发表日期
2015-06-25
DOI
10.1088/1674-1056/24/7/077307

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