Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure

标题
Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure
作者
关键词
-
出版物
Journal of Semiconductor Technology and Science
Volume 23, Issue 4, Pages 236-242
出版商
The Institute of Electronics Engineers of Korea
发表日期
2023-09-01
DOI
10.5573/jsts.2023.23.4.236

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