Low power and robust memory circuits with asymmetrical ground gating

标题
Low power and robust memory circuits with asymmetrical ground gating
作者
关键词
MTCMOS, Data stability, Static noise margin, Write voltage margin, Write assist transistor, Leakage power consumption, Data retention SLEEP mode, Process parameter variations, Minimum power supply voltage
出版物
MICROELECTRONICS JOURNAL
Volume 48, Issue -, Pages 109-119
出版商
Elsevier BV
发表日期
2016-01-02
DOI
10.1016/j.mejo.2015.11.009

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