Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability

标题
Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 44, Issue 11, Pages 1857-1860
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2023-09-22
DOI
10.1109/led.2023.3317856

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