Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability
出版年份 2023 全文链接
标题
Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability
作者
关键词
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出版物
IEEE ELECTRON DEVICE LETTERS
Volume 44, Issue 11, Pages 1857-1860
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2023-09-22
DOI
10.1109/led.2023.3317856
参考文献
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- (2023) Gwang‐Bok Kim et al. Small Methods
- Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications
- (2022) Min Hoe Cho et al. Journal of the Society for Information Display
- Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
- (2022) Taikyu Kim et al. ADVANCED MATERIALS
- Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors
- (2022) Jeonga Lee et al. ACS Applied Materials & Interfaces
- Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs
- (2021) Bo Kyoung Kim et al. IEEE ELECTRON DEVICE LETTERS
- Achieving High Mobility and Excellent Stability in Amorphous In–Ga–Zn–Sn–O Thin-Film Transistors
- (2020) Il Man Choi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
- (2018) Hyeon-A. Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition
- (2016) Jiazhen Sheng et al. ACS Applied Materials & Interfaces
- Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
- (2015) Youngho Kang et al. Advanced Electronic Materials
- Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor
- (2014) Chur-Shyang Fuh et al. IEEE ELECTRON DEVICE LETTERS
- Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors
- (2013) Ji-Young Noh et al. JOURNAL OF APPLIED PHYSICS
- Amorphous In–Ga–Zn–O Dual-Gate TFTs: Current–Voltage Characteristics and Electrical Stress Instabilities
- (2012) K. Abe et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
- (2011) Jae Kyeong Jeong SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Material characteristics and applications of transparent amorphous oxide semiconductors
- (2010) Toshio Kamiya et al. NPG Asia Materials
- High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
- (2009) G. Gonçalves et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Inkjet printed high-mobility indium zinc tin oxide thin film transistors
- (2009) Doo-Hyoung Lee et al. JOURNAL OF MATERIALS CHEMISTRY
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