Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA:n-ZnSe Schottky barrier diodes

This paper reports the frequency dependence of admittance measurements i.e C-V and G/omega-V characteristics of Al/Al2O3/PVA:n-ZnSe MIS diode. The interface states (N-ss) and series resistance (R-s) of the MIS diode strongly influence the C-V-f and G/omega-V-f characteristics. The conductance method is used to calculate the series resistance (R-s), the density of states (N-ss), insulator layer capacitance and thickness. The frequency dependent dieclectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon), loss tangent (tan delta) and a.c. electrical conductivity (sigma(ac)) has been calculated and which are also responsible for observed frequency dispersion in C-V and G/omega curves. (C) 2015 Elsevier Ltd. All rights reserved.