High-Performance Monolayer WS2Field-Effect Transistors on High-κ Dielectrics

Layer-Dependent Modulation of Tungsten Disulfide Photoluminescence by Lateral Electric Fields

(2015) Zhengyu He et al.   ACS Nano

Electrical Transport Properties of Single-Layer WS2

(2014) Dmitry Ovchinnikov et al.   ACS Nano

Mono- and Bilayer WS2 Light-Emitting Transistors

(2014) Sanghyun Jo et al.   NANO LETTERS

Two-dimensional semiconductors with possible high room temperature mobility

(2014) Wenxu Zhang et al.   Nano Research

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

(2014) F. H. L. Koppens et al.   Nature Nanotechnology

Controlling electron propagation on a topological insulator surface via proximity interactions

(2014) Xiaodong Li et al.   PHYSICAL REVIEW B

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Controlled Growth of High-Quality Monolayer WS2 Layers on Sapphire and Imaging Its Grain Boundary

(2013) Yu Zhang et al.   ACS Nano

Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces

(2013) Yi-Hsien Lee et al.   NANO LETTERS

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

(2013) Woo Jong Yu et al.   Nature Nanotechnology

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Mobility enhancement and temperature dependence in top-gated single-layer MoS2

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Identification of individual and few layers of WS2 using Raman Spectroscopy

(2013) Ayse Berkdemir et al.   Scientific Reports

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

(2012) Daniele Braga et al.   NANO LETTERS

Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers

(2012) Humberto R. Gutiérrez et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Deposition of High-QualityHfO2on Graphene and the Effect of Remote Oxide Phonon Scattering

(2010) K. Zou et al.   PHYSICAL REVIEW LETTERS