期刊
JOURNAL OF MICROSCOPY
卷 264, 期 1, 页码 59-63出版社
WILEY
DOI: 10.1111/jmi.12416
关键词
FIB; GFIS; ion milling; LMIS; sample preparation; TEM
类别
资金
- National Science Foundation CMMI/MoM program under GOALI Grant [1235610]
- U.S. Department of Energy [DE-AC02-05CH11231]
- NSF grant from Major Research Instrumentation Program (NSF) [DMR-1338139]
- Biomolecular Nanotechnology Center/QB3 at the University of California, Berkeley
- Direct For Mathematical & Physical Scien [1338139] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1235610] Funding Source: National Science Foundation
- Division Of Materials Research [1338139] Funding Source: National Science Foundation
Gallium-based focused ion beams generated from liquid-metal sources are widely used in micromachining and sample preparation for transmission electron microscopy, with well-known drawbacks such as sample damage and contamination. In this work, an alternative (neon) focused ion beam generated by a gas field-ionization source is evaluated for the preparation of electron-transparent specimens. To do so, electron-transparent sections of Si and an Al alloy are prepared with both Ga and Ne ion beams for direct comparison. Diffraction-contrast imaging and energy dispersive x-ray spectroscopy are used to evaluate the relative damage induced by the two beams, and cross-sections of milled trenches are examined to compare the implantation depth with theoretical predictions from Monte Carlo simulations. Our results show that for the beam voltages and materials systems investigated, Ne ion beam milling does not significantly reduce the focused ion beam induced artefacts. However, the Ne ion beam does enable more precise milling and may be of interest in cases where Ga contamination cannot be tolerated.
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