期刊
MICROELECTRONICS RELIABILITY
卷 138, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2022.114779
关键词
Digital integrated circuit; Process corner detection circuit; Ring oscillator; C -element
资金
- State Grid Corporation of China [5700-202141255A-0-0-00]
This paper proposes a process corner detection circuit based on a self-timing ring oscillator to identify on-chip process variations. It has advantages of small area and low power consumption. The circuit can accurately distinguish slow, typical and fast chips at different temperatures, demonstrating good temperature insensitivity for on-chip process corner detection.
A process corner detection circuit based on a self-timing ring oscillator is proposed to identify on-chip process variations. Composed of a self-timing ring oscillator with 5 stages of C-element, a counting module and a reset module, it is able to distinguish slow, typical and fast dies. Implemented in a 40 nm CMOS process with 1.2 V supply and 100 MHz frequency, it has a small area of 436 mu m2 with 0.18 mW power consumption. Implemented in the foundry's test circuit and tested with probe card in foundry, the measured results show that it can distinguish slow, typical and fast chips with no overlaps between the counting results under different temperatures of -25, 25, 75 and 125 degrees C. It is advantageous in its insensitivity to temperature for on-chip process corner detection.
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