Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature
出版年份 2012 全文链接
标题
Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 25, Issue 10, Pages 1504-1509
出版商
Wiley
发表日期
2012-12-27
DOI
10.1002/adma.201202758
参考文献
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