Improving carrier mobility in two-dimensional semiconductors with rippled materials

Role of Flexural Phonons in Carrier Mobility of Two-Dimensional Semiconductors: Free Standing vs On Substrate

(2021) Chenmu Zhang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

(2020) Areej Aljarb et al.   NATURE MATERIALS

Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility

(2020) Long Cheng et al.   PHYSICAL REVIEW LETTERS

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi 2 O 2 Se for High‐Performance Thermoelectrics

(2020) Fang Yang et al.   ADVANCED MATERIALS

Crested two-dimensional transistors

(2019) Tao Liu et al.   Nature Nanotechnology

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

(2019) Drew Edelberg et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD

(2018) Chris Yang et al.   Silicon

What Limits the Intrinsic Mobility of Electrons and Holes in Two Dimensional Metal Dichalcogenides?

(2018) Long Cheng et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

A library of atomically thin metal chalcogenides

(2018) Jiadong Zhou et al.   NATURE

Perspectives on Thermoelectricity in Layered and 2D Materials

(2018) Jing Wu et al.   Advanced Electronic Materials

Dielectric Behavior as a Screen in Rational Searches for Electronic Materials: Metal Pnictide Sulfosalts

(2018) Xin He et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Effect of dimensionality on thermoelectric powerfactor of molybdenum disulfide

(2017) H. K. Ng et al.   JOURNAL OF APPLIED PHYSICS

Tuning Contact Barrier Height between Metals and MoS2 Monolayer through Interface Engineering

(2017) Jian Wei Chai et al.   Advanced Materials Interfaces

Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

(2016) David Lloyd et al.   NANO LETTERS

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening

(2015) Zhihao Yu et al.   ADVANCED MATERIALS

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

(2015) Xin Zhang et al.   CHEMICAL SOCIETY REVIEWS

Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( $M = {\rm Mo}$ , W; $X = {\rm S}$ , Se)

(2015) Manouchehr Hosseini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

First principles phonon calculations in materials science

(2015) Atsushi Togo et al.   SCRIPTA MATERIALIA

Molecular dynamics simulations of single-layer molybdenum disulphide (MoS2): Stillinger-Weber parametrization, mechanical properties, and thermal conductivity

(2013) Jin-Wu Jiang et al.   JOURNAL OF APPLIED PHYSICS

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Mechanical strain dependent electronic and dielectric properties of two-dimensional honeycomb structures of MoX2 (X=S, Se, Te)

(2013) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

(2012) Hong Li et al.   ADVANCED FUNCTIONAL MATERIALS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Electronic transport in two-dimensional graphene

(2011) S. Das Sarma et al.   REVIEWS OF MODERN PHYSICS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET

(2009) L. A. Tracy et al.   PHYSICAL REVIEW B