High‐Barrier‐Height Ti 3 C 2 T x /Si Microstructure Schottky Junction‐Based Self‐Powered Photodetectors for Photoplethysmographic Monitoring

标题
High‐Barrier‐Height Ti 3 C 2 T x /Si Microstructure Schottky Junction‐Based Self‐Powered Photodetectors for Photoplethysmographic Monitoring
作者
关键词
-
出版物
Advanced Materials Technologies
Volume -, Issue -, Pages 2200555
出版商
Wiley
发表日期
2022-06-28
DOI
10.1002/admt.202200555

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