期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 6, 期 35, 页码 9545-9551出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc02786b
关键词
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资金
- Department of Science and Technology (DST), Govt. of India [SR/NM/NS-1502/2014]
- KAUST
- CSIR, Govt. of India
- DST-INSPIRE, Govt. of India [170198 DST/INSPIRE Fellowship/2016]
Electron-hole pair separation and photocurrent conversion at two-dimensional (2D) and three-dimensional (3D) hybrid interfaces are important for achieving high performance, self-powered optoelectronic devices such as photodetectors. In this regard, herein, we designed and demonstrated a graphene/silicon (Gr/Si) (2D/3D) van der Waals (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and shows good performance as a self-powered detector, responding to 532 nm at zero bias. The self-powered photodetector functions under the mechanism of photovoltaic effect and exhibits responsivity as high as 510 mA W-1 with a photo switching ratio of 10(5) and a response time of 130 s. The high-performance vdW heterostructure photodetector demonstrated herein is attributed to the Schottky barrier that effectively prolongs the lifetime of photo-excited carriers, resulting in fast separation and transport of photoexcited carriers. The self-powered photodetector with superior light harvesting and carrier transport behaviour is expected to open a window for the technological implementation of Si-based monolithic optoelectronic devices.
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