Chemical sputtering by H2+ and H3+ ions during silicon deposition

Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2discharge in the a-Si:H to μc-Si:H transition regime

(2016) Kees Landheer et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

(2015) Hiromasa Ohmi et al.   JOURNAL OF APPLIED PHYSICS

Plasma probe characteristics in low density hydrogen pulsed plasmas

(2015) D I Astakhov et al.   PLASMA SOURCES SCIENCE & TECHNOLOGY

Growth mechanisms study of microcrystalline silicon deposited by SiH4/H2 plasma using tailored voltage waveforms

(2014) B. Bruneau et al.   JOURNAL OF APPLIED PHYSICS

Enhanced sheath heating in capacitively coupled discharges due to non-sinusoidal voltage waveforms

(2012) T. Lafleur et al.   APPLIED PHYSICS LETTERS

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

(2010) A. Descoeudres et al.   APPLIED PHYSICS LETTERS

High deposition rate nanocrystalline silicon with enhanced homogeneity

(2010) Arjan Verkerk et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Surface radicals in silane/hydrogen discharges

(2009) Peter Horvath et al.   JOURNAL OF APPLIED PHYSICS

On the possibility of making a geometrically symmetric RF-CCP discharge electrically asymmetric

(2008) Brian G Heil et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS