Electronic properties of the residual donor in unintentionally doped β-Ga2O3

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Shallow donor in natural MoS2

(2015) Nguyen T. Son et al.   Physica Status Solidi-Rapid Research Letters

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

Stable and metastable Si negative-U centers in AlGaN and AlN

(2014) Xuan Thang Trinh et al.   APPLIED PHYSICS LETTERS

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

(2013) D. Gogova et al.   JOURNAL OF CRYSTAL GROWTH

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Shallow donor and DX states of Si in AlN

(2011) N. T. Son et al.   APPLIED PHYSICS LETTERS

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Electron-spin resonance of transparent conductive oxide β-Ga2O3

(2011) Mitsuo Yamaga et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

(2011) A. Wolos et al.   PHYSICAL REVIEW B

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

(2008) Takayoshi Oshima et al.   Applied Physics Express

Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS