Junctionless nanowire TFET with built-in N-P-N bipolar action: Physics and operational principle
出版年份 2016 全文链接
标题
Junctionless nanowire TFET with built-in N-P-N bipolar action: Physics and operational principle
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 120, Issue 22, Pages 225702
出版商
AIP Publishing
发表日期
2016-12-15
DOI
10.1063/1.4971345
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Representation of strained gate-all-around junctionless tunneling nanowire filed effect transistor for analog applications
- (2016) Rouzbeh Molaei Imen Abadi et al. MICROELECTRONIC ENGINEERING
- Short-Channel Effects in Tunnel FETs
- (2015) Jianzhi Wu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Controlling the Drain Side Tunneling Width to Reduce Ambipolar Current in Tunnel FETs Using Heterodielectric BOX
- (2015) Shubham Sahay et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Dopingless PNPN tunnel FET with improved performance: Design and analysis
- (2015) Mamidala Saketh Ram et al. SUPERLATTICES AND MICROSTRUCTURES
- PNPN tunnel FET with controllable drain side tunnel barrier width: Proposal and analysis
- (2015) Dawit Burusie Abdi et al. SUPERLATTICES AND MICROSTRUCTURES
- In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor
- (2014) Dawit Burusie Abdi et al. IEEE ELECTRON DEVICE LETTERS
- High-Speed and Low-Power Ultradeep-Submicrometer III-V Heterojunctionless Tunnel Field-Effect Transistor
- (2014) Pranav Kumar Asthana et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors
- (2014) Chun-Hsing Shih et al. IEEE Journal of the Electron Devices Society
- Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
- (2014) Dawit B. Abdi et al. IEEE Journal of the Electron Devices Society
- Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFET
- (2013) Nattapol Damrongplasit et al. IEEE ELECTRON DEVICE LETTERS
- Junctionless Tunnel Field Effect Transistor
- (2013) Bahniman Ghosh et al. IEEE ELECTRON DEVICE LETTERS
- Ultra Low Power Junctionless MOSFETs for Subthreshold Logic Applications
- (2013) Mukta Singh Parihar et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Doping-Less Tunnel Field Effect Transistor: Design and Investigation
- (2013) M. Jagadesh Kumar et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Single transistor latch phenomenon in junctionless transistors
- (2013) Mukta Singh Parihar et al. JOURNAL OF APPLIED PHYSICS
- Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions
- (2013) Chun-Hsing Shih et al. JOURNAL OF APPLIED PHYSICS
- Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET)
- (2013) Punyasloka Bal et al. Journal of Computational Electronics
- Bipolar effects in unipolar junctionless transistors
- (2012) Mukta Singh Parihar et al. APPLIED PHYSICS LETTERS
- Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism
- (2012) Ali A. Orouji et al. CURRENT APPLIED PHYSICS
- A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement
- (2012) Morteza Rahimian et al. CURRENT APPLIED PHYSICS
- Effects of Device Geometry on Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
- (2012) Min Jin Lee et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications
- (2012) Dipankar Ghosh et al. IEEE ELECTRON DEVICE LETTERS
- Effect of Band-to-Band Tunneling on Junctionless Transistors
- (2012) Suresh Gundapaneni et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors
- (2012) Lu Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing
- (2012) Hsu-Yu Chang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electrical characteristics of 20-nm junctionless Si nanowire transistors
- (2012) Chan-Hoon Park et al. SOLID-STATE ELECTRONICS
- Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies
- (2012) Hsu-Yu Chang et al. SOLID-STATE ELECTRONICS
- Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
- (2012) Ning Cui et al. AIP Advances
- Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics
- (2011) Seongjae Cho et al. CURRENT APPLIED PHYSICS
- Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction
- (2011) Chun-Hsing Shih et al. IEEE ELECTRON DEVICE LETTERS
- Vertical Silicon p-n-p-n Tunnel nMOSFET With MBE-Grown Tunneling Junction
- (2011) Ahmet Tura et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Theory of the Junctionless Nanowire FET
- (2011) Elena Gnani et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs
- (2011) Nattapol Damrongplasit et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Junctionless Multiple-Gate Transistors for Analog Applications
- (2011) Rodrigo Trevisoli Doria et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
- (2011) Sneh Saurabh et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Tunnel field-effect transistors as energy-efficient electronic switches
- (2011) Adrian M. Ionescu et al. NATURE
- Drive current enhancement in p-tunnel FETs by optimization of the process conditions
- (2011) D. Leonelli et al. SOLID-STATE ELECTRONICS
- Junctionless Nanowire Transistor (JNT): Properties and design guidelines
- (2011) J.P. Colinge et al. SOLID-STATE ELECTRONICS
- Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation
- (2011) Morteza Rahimian et al. SUPERLATTICES AND MICROSTRUCTURES
- Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric
- (2010) Costin Anghel et al. APPLIED PHYSICS LETTERS
- Low subthreshold slope in junctionless multigate transistors
- (2010) Chi-Woo Lee et al. APPLIED PHYSICS LETTERS
- Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
- (2010) Woo Young Choi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- High-Temperature Performance of Silicon Junctionless MOSFETs
- (2010) Chi-Woo Lee et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor
- (2010) Ritesh Jhaveri et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Nanowire transistors without junctions
- (2010) Jean-Pierre Colinge et al. Nature Nanotechnology
- Junctionless multigate field-effect transistor
- (2009) Chi-Woo Lee et al. APPLIED PHYSICS LETTERS
- Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits
- (2009) Yasin Khatami et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
- (2009) Siyuranga O. Koswatta et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis
- (2009) Sneh Saurabh et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Performance estimation of junctionless multigate transistors
- (2009) Chi-Woo Lee et al. SOLID-STATE ELECTRONICS
- Silicon nanowire tunneling field-effect transistors
- (2008) M. T. Björk et al. APPLIED PHYSICS LETTERS
- The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor
- (2008) Venkatagirish Nagavarapu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
- (2008) Eng-Huat Toh et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
- (2008) Eng-Huat Toh et al. JOURNAL OF APPLIED PHYSICS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started