标题
Stateful implication logic based on perpendicular magnetic tunnel junctions
作者
关键词
-
出版物
Science China-Information Sciences
Volume 65, Issue 2, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2021-12-10
DOI
10.1007/s11432-020-3189-x
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Nanoscale resistive switching memory devices: a review
- (2019) Stefan Slesazeck et al. NANOTECHNOLOGY
- Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation
- (2018) Lezhi Wang et al. IEEE ELECTRON DEVICE LETTERS
- Memcomputing: fusion of memory and computing
- (2018) Yi Li et al. Science China-Information Sciences
- Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
- (2018) Mengxing Wang et al. Nature Communications
- Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
- (2018) K. Watanabe et al. Nature Communications
- Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies
- (2018) Noel D’Souza et al. NANOTECHNOLOGY
- Three-dimensional integration of nanotechnologies for computing and data storage on a single chip
- (2017) Max M. Shulaker et al. NATURE
- Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity
- (2015) Yuchao Yang et al. ADVANCED MATERIALS
- A Single Magnetic Tunnel Junction Representing the Basic Logic Functions—NAND, NOR, and IMP
- (2015) Dong Ik Suh et al. IEEE ELECTRON DEVICE LETTERS
- A new spin on magnetic memories
- (2015) Andrew D. Kent et al. Nature Nanotechnology
- Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
- (2014) H. Sato et al. APPLIED PHYSICS LETTERS
- Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits
- (2013) Hiwa Mahmoudi et al. IEEE TRANSACTIONS ON MAGNETICS
- Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions
- (2013) J. Z. Sun et al. PHYSICAL REVIEW B
- Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
- (2012) H. Sato et al. APPLIED PHYSICS LETTERS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Perpendicular all the way
- (2010) Andrew D. Kent NATURE MATERIALS
- A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
- (2010) S. Ikeda et al. NATURE MATERIALS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now