标题
Elemental electrical switch enabling phase segregation–free operation
作者
关键词
-
出版物
SCIENCE
Volume 374, Issue 6573, Pages 1390-1394
出版商
American Association for the Advancement of Science (AAAS)
发表日期
2021-12-10
DOI
10.1126/science.abi6332
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications
- (2021) Shujing Jia et al. Physica Status Solidi-Rapid Research Letters
- Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
- (2020) Pierre Noé et al. Science Advances
- Phase dependence of Schottky barrier heights for Ge–Sb–Te and related phase-change materials
- (2020) Zhaofu Zhang et al. JOURNAL OF APPLIED PHYSICS
- Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study
- (2020) Aaron Kramer et al. npj 2D Materials and Applications
- Ultrahigh drive current and large selectivity in GeS selector
- (2020) Shujing Jia et al. Nature Communications
- Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
- (2019) Wei Zhang et al. Nature Reviews Materials
- A Reference-Free Temperature-Dependency-Compensating Readout Scheme for Phase-Change Memory Using Flash-ADC-Configured Sense Amplifiers
- (2019) Dong-Hwan Jin et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Femtosecond x-ray diffraction reveals a liquid–liquid phase transition in phase-change materials
- (2019) Peter Zalden et al. SCIENCE
- Ovonic threshold switching selectors for three-dimensional stackable phase-change memory
- (2019) Min Zhu et al. MRS BULLETIN
- A C–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application
- (2018) Solomon Amsalu Chekol et al. NANOTECHNOLOGY
- Monatomic phase change memory
- (2018) Martin Salinga et al. NATURE MATERIALS
- Three-dimensional (3D) tetra-culture brain on chip platform for organophosphate toxicity screening
- (2018) Youngmi Koo et al. Scientific Reports
- Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application
- (2017) Yunmo Koo et al. IEEE ELECTRON DEVICE LETTERS
- Epitaxial Growth and Band Structure of Te Film on Graphene
- (2017) Xiaochun Huang et al. NANO LETTERS
- One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport
- (2017) Yuchen Du et al. NANO LETTERS
- Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
- (2017) Feng Rao et al. SCIENCE
- Te-based chalcogenide materials for selector applications
- (2017) A. Velea et al. Scientific Reports
- A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
- (2013) Myoung-Jae Lee et al. Nature Communications
- Measurement of crystal growth velocity in a melt-quenched phase-change material
- (2013) Martin Salinga et al. Nature Communications
- Nanosecond threshold switching of GeTe6 cells and their potential as selector devices
- (2012) M. Anbarasu et al. APPLIED PHYSICS LETTERS
- Breaking the Speed Limits of Phase-Change Memory
- (2012) D. Loke et al. SCIENCE
- Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires
- (2012) S.-W. Nam et al. SCIENCE
- Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials
- (2012) Weijie Wang et al. Scientific Reports
- Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
- (2011) F. Xiong et al. SCIENCE
- Plasma energy and work function of conducting transition metal nitrides for electronic applications
- (2009) G. M. Matenoglou et al. APPLIED PHYSICS LETTERS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started