Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
出版年份 2020 全文链接
标题
Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
作者
关键词
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出版物
Science Advances
Volume 6, Issue 9, Pages eaay2830
出版商
American Association for the Advancement of Science (AAAS)
发表日期
2020-02-29
DOI
10.1126/sciadv.aay2830
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