Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors
出版年份 2021 全文链接
标题
Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 55, Issue 11, Pages 115107
出版商
IOP Publishing
发表日期
2021-12-08
DOI
10.1088/1361-6463/ac40b8
参考文献
相关参考文献
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