A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding

标题
A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding
作者
关键词
-
出版物
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume -, Issue -, Pages 1-1
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2022-01-22
DOI
10.1109/jssc.2022.3141370

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