Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
出版年份 2021 全文链接
标题
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
作者
关键词
Resistive switching memory (RRAM), Memristor, Silicon nitride, Space charge limited current (SCLC), Charge-trapping, Multi-level resistance tuning, Random telegraph noise (RTN), Electronic noise, Low frequency noise
出版物
CHAOS SOLITONS & FRACTALS
Volume 153, Issue -, Pages 111533
出版商
Elsevier BV
发表日期
2021-11-12
DOI
10.1016/j.chaos.2021.111533
参考文献
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