Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Subthermionic negative capacitance ion sensitive field-effect transistor

(2020) Francesco Bellando et al.   APPLIED PHYSICS LETTERS

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

(2020) Sadegh Kamaei et al.   IEEE ELECTRON DEVICE LETTERS

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

(2020) Nicolò Oliva et al.   npj 2D Materials and Applications

Unveiling the double-well energy landscape in a ferroelectric layer

(2019) Michael Hoffmann et al.   NATURE

Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

(2019) Sidi Fan et al.   ACS Nano

Why Do Ferroelectrics Exhibit Negative Capacitance?

(2019) Michael Hoffmann et al.   Materials

Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor

(2018) Mengwei Si et al.   NANO LETTERS

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

(2018) Ali Saeidi et al.   NANOTECHNOLOGY

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+ -WSe2 Source

(2018) Junyang He et al.   Advanced Electronic Materials

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

(2018) Zhongxun Guo et al.   Advanced Science

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

(2017) Ali Saeidi et al.   IEEE ELECTRON DEVICE LETTERS

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

(2017) Elvedin Memisevic et al.   NANO LETTERS

Negative capacitance gives a positive boost

(2017) Adrian M. Ionescu   Nature Nanotechnology

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor

(2017) Xiao Yan et al.   Small

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

(2016) Felicia A. McGuire et al.   APPLIED PHYSICS LETTERS

Field-effect transistors of high-mobility few-layer SnSe2

(2016) Chenglei Guo et al.   APPLIED PHYSICS LETTERS

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

(2016) Jaesung Jo et al.   IEEE ELECTRON DEVICE LETTERS

Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance

(2016) Ali Saeidi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Negative Capacitance Behavior in a Leaky Ferroelectric

(2016) Asif Islam Khan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

(2016) Alexandru Rusu et al.   NANOTECHNOLOGY

Negative capacitance in multidomain ferroelectric superlattices

(2016) Pavlo Zubko et al.   NATURE

2D materials and van der Waals heterostructures

(2016) K. S. Novoselov et al.   SCIENCE

Polarity control in WSe2 double-gate transistors

(2016) Giovanni V. Resta et al.   Scientific Reports

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

(2015) Tania Roy et al.   ACS Nano

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

(2015) Dayu Zhou et al.   ACTA MATERIALIA

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Band-Edge Steepness Obtained From Esaki/Backward Diode Current–Voltage Characteristics

(2014) Sapan Agarwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

(2014) Daniel J. R. Appleby et al.   NANO LETTERS

Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

(2014) Weiwei Gao et al.   NANO LETTERS

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

(2014) Andres Castellanos-Gomez et al.   2D Materials

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

(2013) Anil W. Dey et al.   IEEE ELECTRON DEVICE LETTERS

Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

(2013) Catherine Dubourdieu et al.   Nature Nanotechnology

Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires

(2012) Bahram Ganjipour et al.   ACS Nano

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Ferroelectric transistors with improved characteristics at high temperature

(2010) Giovanni A. Salvatore et al.   APPLIED PHYSICS LETTERS

Thermally activated switching kinetics in second-order phase transition ferroelectrics

(2010) Marian Vopsaroiu et al.   PHYSICAL REVIEW B

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS