Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT

Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique

(2021) R. Sridevi et al.   Silicon

Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique

(2020) V. Sandeep et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications

(2019) Shahadat H. Sohel et al.   IEEE ELECTRON DEVICE LETTERS

Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

(2018) D. Nirmal et al.   SUPERLATTICES AND MICROSTRUCTURES

Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications

(2018) A.S. Augustine Fletcher et al.   AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

(2017) P. Murugapandiyan et al.   SUPERLATTICES AND MICROSTRUCTURES

A survey of Gallium Nitride HEMT for RF and high power applications

(2017) A.S. Augustine Fletcher et al.   SUPERLATTICES AND MICROSTRUCTURES

Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

(2016) J. Charles Pravin et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement

(2016) P. Prajoon et al.   SUPERLATTICES AND MICROSTRUCTURES

A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT

(2014) Raphael Brown et al.   IEEE ELECTRON DEVICE LETTERS

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

(2013) Sourabh Khandelwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2012) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

(2012) Han-Yin Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

(2012) A. Pérez-Tomás et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

(2010) A. Pérez-Tomás et al.   SOLID-STATE ELECTRONICS

T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

(2009) Ritesh Gupta et al.   SUPERLATTICES AND MICROSTRUCTURES

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS