High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2

标题
High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume -, Issue -, Pages 2010303
出版商
Wiley
发表日期
2021-03-19
DOI
10.1002/adfm.202010303

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