Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors

标题
Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors
作者
关键词
-
出版物
Physical Review Applied
Volume 15, Issue 2, Pages -
出版商
American Physical Society (APS)
发表日期
2021-02-10
DOI
10.1103/physrevapplied.15.024021

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