Comparing the Gate Dependence of Contact Resistance and Channel Resistance in Organic Field-Effect Transistors for Understanding the Mobility Overestimation Issue

标题
Comparing the Gate Dependence of Contact Resistance and Channel Resistance in Organic Field-Effect Transistors for Understanding the Mobility Overestimation Issue
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 3, Pages 421-423
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2018-01-26
DOI
10.1109/led.2018.2798288

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