Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor
出版年份 2021 全文链接
标题
Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor
作者
关键词
-
出版物
NPG Asia Materials
Volume 13, Issue 1, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2021-01-29
DOI
10.1038/s41427-021-00281-4
参考文献
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