标题
Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 118, Issue 8, Pages 083106
出版商
AIP Publishing
发表日期
2021-02-25
DOI
10.1063/5.0035306
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Memristor with a ferroelectric HfO2 layer: In which case it is a ferroelectric tunnel junction
- (2020) Vitalii Mikheev et al. NANOTECHNOLOGY
- Low-Voltage Domain-Wall LiNbO3 Memristors
- (2020) P. Chaudhary et al. NANO LETTERS
- High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
- (2020) Jiangbin Wu et al. Nature Electronics
- Nanodomain Engineering for Programmable Ferroelectric Devices
- (2019) Alexey Lipatov et al. NANO LETTERS
- Piezoresponse force microscopy and nanoferroic phenomena
- (2019) Alexei Gruverman et al. Nature Communications
- Ferroelectric Second-Order Memristor
- (2019) Vitalii Mikheev et al. ACS Applied Materials & Interfaces
- Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel Barriers
- (2019) Yingfen Wei et al. Physical Review Applied
- Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory
- (2019) Jungkyu Yoon et al. APPLIED PHYSICS LETTERS
- Recent Progress in Two‐Dimensional Ferroelectric Materials
- (2019) Zhao Guan et al. Advanced Electronic Materials
- Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf 0.5 Zr 0.5 O 2 Tunnel Junctions
- (2019) Milena Cervo Sulzbach et al. Advanced Electronic Materials
- Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
- (2019) Hojoon Ryu et al. Scientific Reports
- MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit
- (2018) Xingqiang Liu et al. ADVANCED MATERIALS
- Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control
- (2018) Mengqi Zeng et al. CHEMICAL REVIEWS
- Interplay between ferroelectric and resistive switching in doped crystalline HfO2
- (2018) Benjamin Max et al. JOURNAL OF APPLIED PHYSICS
- Unconventional superconductivity in magic-angle graphene superlattices
- (2018) Yuan Cao et al. NATURE
- Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis
- (2018) Peng Zhao et al. 2D Materials
- Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications
- (2018) Lin Chen et al. Nanoscale
- Optical control of polarization in ferroelectric heterostructures
- (2018) Tao Li et al. Nature Communications
- Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
- (2018) Herng Yau Yoong et al. ADVANCED FUNCTIONAL MATERIALS
- Electron transport across ultrathin ferroelectric Hf 0.5 Zr 0.5 O 2 films on Si
- (2017) A. Chouprik et al. MICROELECTRONIC ENGINEERING
- Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2–BaTiO3–SrRuO3 Tunnel Junctions
- (2017) Tao Li et al. NANO LETTERS
- Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
- (2017) Felicia A. McGuire et al. NANO LETTERS
- Steep-slope hysteresis-free negative capacitance MoS2 transistors
- (2017) Mengwei Si et al. Nature Nanotechnology
- Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
- (2016) S. Starschich et al. APPLIED PHYSICS LETTERS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier
- (2016) Xiaohui Liu et al. PHYSICAL REVIEW LETTERS
- Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories
- (2015) Alexey Lipatov et al. ACS Nano
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
- (2015) Min Hyuk Park et al. ADVANCED MATERIALS
- Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
- (2014) Tony Schenk et al. ACS Applied Materials & Interfaces
- Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes
- (2014) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Ferroelectric tunnel junctions with graphene electrodes
- (2014) H. Lu et al. Nature Communications
- Retention of resistance states in ferroelectric tunnel memristors
- (2013) D. J. Kim et al. APPLIED PHYSICS LETTERS
- Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
- (2013) Zheng Wen et al. NATURE MATERIALS
- Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers
- (2012) Daniel Pantel et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Electroresistance effects in ferroelectric tunnel barriers
- (2010) D. Pantel et al. PHYSICAL REVIEW B
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
- Polarization Control of Electron Tunneling into Ferroelectric Surfaces
- (2009) P. Maksymovych et al. SCIENCE
- Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
- (2009) S. Monaghan et al. SOLID-STATE ELECTRONICS
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