期刊
ELECTROCHIMICA ACTA
卷 218, 期 -, 页码 32-40出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2016.09.096
关键词
nitrogen doped graphene; three dimensional structure; supercapacitors; volumetric capacitance; nitrogen configuration
资金
- National Natural Science Foundation of China [21571066, U1501242, 21371061, 21401057]
- Key Program of Science Technology Innovation Foundation of Universities [cxzd1113]
- Science and Technology Plan Projects of Guangdong Province [2012B010200030]
- Natural Science Foundation of Guangdong Province, China [S2013030012842]
- Key Laboratory of Functional Inorganic Material Chemistry (Heilongjiang University)
Three dimensional nitrogen-doped graphene (3DNG) with high nitrogen content and improved electrochemical performance is successfully prepared by a facile, lost-cost hydrothermal method with ammonia as reducing-doping agent. The as-prepared 3DNG exhibits a hierarchical and interconnected porous network, which offers favorable pathways for electrolyte penetration and transportation. Remarkably, as binder-free electrode in aqueous electrolyte, the resultant 3DNG-2 with both high nitrogen content (7.71 at%) and large active material density (1.31 g cm (3)) exhibits an ultrahigh volumetric capacitance of 437.5 F cm (3) (334.0 F g (1)) at current density of 0.5 A g (1) and superior cycling stability (93% capacitance retention after 20 000 cycles at high current density of 10 A g (1)). Further analyses indicate that the N-configurations are of great significance to the improvement of electrochemical behavior as well as the N-content. This work provides an effective way to synthesize 3DNG with excellent electrochemical properties for high performance supercapacitor and promotes the in-depth understanding of the enhancement mechanism of N-doping to supercapacitor performance. (C) 2016 Elsevier Ltd. All rights reserved.
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