A predictive model for high-frequency operation of two-dimensional transistors from first-principles

Black Phosphorus High-Frequency Transistors with Local Contact Bias

(2020) Cheng Li et al.   ACS Nano

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

(2020) Xiaotian Sun et al.   ACS Applied Materials & Interfaces

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

(2020) Francisco Pasadas et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility

(2020) Long Cheng et al.   PHYSICAL REVIEW LETTERS

Analogue two-dimensional semiconductor electronics

(2020) Dmitry K. Polyushkin et al.   Nature Electronics

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors

(2019) Samuel Berweger et al.   NANO LETTERS

Contact Engineering High Performance n-Type MoTe2 Transistors

(2019) Michal J Mleczko et al.   NANO LETTERS

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

(2019) Henan Li et al.   Advanced Materials Interfaces

2DMatPedia, an open computational database of two-dimensional materials from top-down and bottom-up approaches

(2019) Jun Zhou et al.   Scientific Data

Phonon limited anisotropic quantum transport in phosphorene field effect transistors

(2019) Madhuchhanda Brahma et al.   JOURNAL OF APPLIED PHYSICS

A New Velocity Saturation Model of MoS2 Field-Effect Transistors

(2018) Jingchen Cao et al.   IEEE ELECTRON DEVICE LETTERS

A New Holistic Model of 2-D Semiconductor FETs

(2018) Enrique G. Marin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds

(2018) Nicolas Mounet et al.   Nature Nanotechnology

The computational 2D materials database: High-throughput modeling and discovery of atomically thin crystals

(2018) Sten Haastrup et al.   2D Materials

Modeling of Electron Devices Based on 2-D Materials

(2018) E. G. Marin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

(2018) Zegao Wang et al.   NPG Asia Materials

2D MoSe2 Transistor with Polymer-Brush/Channel Interface

(2018) Yeonsu Jeong et al.   Advanced Materials Interfaces

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

(2018) Qingguo Gao et al.   Nature Communications

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

(2017) Jorge-Daniel Aguirre-Morales et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors

(2017) Demin Yin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A microprocessor based on a two-dimensional semiconductor

(2017) Stefan Wachter et al.   Nature Communications

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions

(2016) Yang Xu et al.   ACS Nano

Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles

(2016) Zhenghe Jin et al.   APPLIED PHYSICS LETTERS

S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

(2016) Saurabh V. Suryavanshi et al.   JOURNAL OF APPLIED PHYSICS

Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies

(2016) Weinan Zhu et al.   NANO LETTERS

Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus

(2016) A. N. Rudenko et al.   PHYSICAL REVIEW LETTERS

Effect of aging-induced disorder on the quantum transport properties of few-layer WTe2

(2016) Wei Lai Liu et al.   2D Materials

Optimization algorithm for the generation of ONCV pseudopotentials

(2015) Martin Schlipf et al.   COMPUTER PHYSICS COMMUNICATIONS

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

(2015) Y. Cao et al.   NANO LETTERS

Electro-mechanical anisotropy of phosphorene

(2015) Luqing Wang et al.   Nanoscale

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

(2015) Du Xiang et al.   Nature Communications

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

(2014) Yuchen Du et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Electrical Transport Properties of Single-Layer WS2

(2014) Dmitry Ovchinnikov et al.   ACS Nano

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

(2014) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Black Phosphorus Radio-Frequency Transistors

(2014) Han Wang et al.   NANO LETTERS

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Strain-Induced Gap Modification in Black Phosphorus

(2014) A. S. Rodin et al.   PHYSICAL REVIEW LETTERS

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

(2014) Jingsi Qiao et al.   Nature Communications

Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

(2013) Neha Sharan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

(2013) Gennady I. Zebrev et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimized norm-conserving Vanderbilt pseudopotentials

(2013) D. R. Hamann   PHYSICAL REVIEW B

Continuity equation based nonquasi-static charge model for independent double gate MOSFET

(2013) Neha Sharan et al.   Journal of Computational Electronics

Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations

(2012) Zeqin Zhu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

(2011) David Jimenez et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

A physics-based, small-signal model for graphene field effect transistors

(2011) James G. Champlain   SOLID-STATE ELECTRONICS

Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET

(2010) Sudipta Sarkar et al.   SOLID-STATE ELECTRONICS