Dislocation patterning and bunching in crystals and epitaxial layers - a review

Interaction of SiC particles with moving solid–liquid interface during directional solidification of silicon

(2016) J. Friedrich et al.   JOURNAL OF CRYSTAL GROWTH

Analysis of particle engulfment during the growth of crystalline silicon

(2016) Yutao Tao et al.   JOURNAL OF CRYSTAL GROWTH

Silicon doping of HVPE GaN bulk-crystals avoiding tensile strain generation

(2016) Patrick Hofmann et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Epitaxial challenges of GaN on silicon

(2015) F. Semond   MRS BULLETIN

Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography

(2013) D. Oriwol et al.   ACTA MATERIALIA

Molecular dynamics simulation of stress field around edge dislocations in Aluminum

(2013) M. Soleymani et al.   COMPUTATIONAL MATERIALS SCIENCE

Stress fields and geometrically necessary dislocation density distributions near the head of a blocked slip band

(2012) T. Benjamin Britton et al.   ACTA MATERIALIA

High temperature annealing of bent multicrystalline silicon rods

(2012) Torunn Ervik et al.   ACTA MATERIALIA

Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots

(2011) B. Ryningen et al.   ACTA MATERIALIA

Effect of thickness on the microstructure of GaN films on Al2O3(0001) by laser molecular beam epitaxy

(2011) Ying-Ying Liu et al.   Chinese Physics B

Investigation of Te inclusion induced glides and the corresponding dislocations in CdZnTe crystal

(2011) Yadong Xu et al.   CRYSTENGCOMM

Travelling magnetic fields applied to bulk crystal growth from the melt: The step from basic research to industrial scale

(2007) Peter Rudolph   JOURNAL OF CRYSTAL GROWTH