Improved Electrical Properties of Top-Gate MoS2 Transistor With NH3-Plasma Treated HfO2 as Gate Dielectric

出版年份 2020 全文链接

标题

作者

关键词

出版物

Volume 41, Issue 9, Pages 1364-1367

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-07-31

DOI

10.1109/led.2020.3013069

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