Article
Chemistry, Multidisciplinary
Mengwei Si, Yaoqiao Hu, Zehao Lin, Xing Sun, Adam Charnas, Dongqi Zheng, Xiao Lyu, Haiyan Wang, Kyeongjae Cho, Peide D. Ye
Summary: This work demonstrates enhancement-mode field-effect transistors using an atomically-deposited amorphous In2O3 channel with thickness as low as 0.7 nm. The controllable thickness of In2O3 at an atomic scale allows for the design of sufficient 2D carrier density in the channel, affecting threshold voltage and channel carrier density. The model of trap neutral level (TNL) explains how the Fermi level aligns in the conduction band of In2O3 due to the quantum confinement effect, as confirmed by density function theory (DFT) calculations.
Article
Nanoscience & Nanotechnology
Dongil Ho, Sunwoo Choi, Hyunwoo Kang, Byungkyu Park, Minh Nhut Le, Sung Kyu Park, Myung-Gil Kim, Choongik Kim, Antonio Facchetti
Summary: Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions were investigated for radiation hardness against ionizing radiation exposure. The amorphous zinc-indium-tin oxide (Zn-In-Sn-O or ZITO) was found to be an optimal radiation-resistant channel layer of TFTs due to its structural plasticity, defect tolerance, and high electron mobility. In situ irradiation experiments revealed three degradation mechanisms, including increase in channel conductivity, charge buildup in the interface and dielectric, and trap-assisted tunneling in the dielectric. By employing a radiation-resistant ZITO channel, a thin SiO2 dielectric, and a passivation layer, oxide-based TFTs demonstrated excellent stability under real-time gamma-ray irradiation.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Ceramics
Hyeong Jin Park, Taikyu Kim, Min Jae Kim, Hojae Lee, Jun Hyung Lim, Jae Kyeong Jeong
Summary: In this study, high-performance polycrystalline IGO TFTs were successfully fabricated at a low temperature with outstanding electrical characteristics and high stability. The density of oxygen plasma plays a crucial role in the crystalline quality of the IGO thin film.
CERAMICS INTERNATIONAL
(2022)
Article
Materials Science, Multidisciplinary
Jiseob Lee, Suhui Lee, Md Mobaidul Islam, Jin Jang
Summary: A short channel coplanar amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with a ZrAlOx (ZAO) interlayer has been developed, showing high field-effect mobility and on/off current ratio, and demonstrating stability under testing conditions of 85 degrees Celsius and 85% relative humidity for 2 days.
ADVANCED ENGINEERING MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Jinbaek Bae, Arqum Ali, Jin Jang
Summary: Spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure exhibits excellent performance and stability, making it a promising metal oxide semiconductor for high-performance TFT backplanes.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
Soochang You, Anvar Tukhtaev, Gergely Tarsoly, Han Lin Zhao, Xiao Lin Wang, Fei Shan, Jae-Yun Lee, Jin Hee Lee, Sung Il Jang, Yong Jin Jeong, Sung-Jin Kim
Summary: Solution processable metal oxide semiconductors offer opportunities for large area fabrication of transparent logic circuits. In this paper, we present our results on the fabrication of TFTs with IZO semiconductor film and optimize the device fabrication process by studying the effect of stacking multiple layers. The practical applicability of the TFTs is demonstrated by fabricating a load-type inverter circuit and measuring its electrical response.
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
S. Arulkumar, S. Parthiban, J. Y. Kwon
Summary: The room temperature sputtered indium silicon oxide thin-films were annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The results showed that the annealing temperature had a significant influence on the structure and properties of the thin films, and the highest mobility was achieved at an annealing temperature of 200 degrees Celsius.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Analytical
Xingzhen Yan, Kaian Song, Bo Li, Yiqiang Zhang, Fan Yang, Yanjie Wang, Chao Wang, Yaodan Chi, Xiaotian Yang
Summary: A double-active-layers structure was used to prepare an indium-free metal oxide thin-film transistor with improved performance at room temperature. The TFT devices with ZnO/AZO/SiO2/Si double-active-layers exhibited better field-effect properties, lower on/off ratio, higher mobility, and easier on-state compared to devices with single AZO or ZnO active layer or inverted AZO/ZnO/SiO2/Si double-active-layers. The annealing process under vacuum condition further enhanced the performance of the devices.
Article
Engineering, Electrical & Electronic
Le Weng, Shuo Zhang, Dan Kuang, Bin Liu, Xianwen Liu, Baiqi Jiang, Guangchen Zhang, Zongchi Bao, Ce Ning, Dawei Shi, Jian Guo, Guangcai Yuan, Zhinong Yu
Summary: This study presents a dual active layer structure of indium-zinc oxide (InZnO) and indiummagnesium-zinc oxide (InMgZnO) fabricated using a simple solution process. By utilizing a heterojunction structure and optimizing the front channel thickness, as well as treating the heterojunction interface with oxygen plasma, the researchers achieved thin-film transistor (TFT) devices with enhanced performance and greater stability. The high electrical performance and stability of the heterojunction TFTs can be attributed to the reduced interfacial defect state achieved through oxygen plasma treatment and the electron redistribution occurring at the heterojunction interface.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Hui Yang, Weiguang Yang, Jinbao Su, Xiqing Zhang
Summary: The research investigated the optical properties of amorphous Phosphorus-doped Indium-Zinc-Tin-Oxide (aIZTO:P) thin films and their potential as the channel layer for thin film transistors (TFTs). Results showed promising electrical performance and stability of a-IZTO:P TFT, demonstrating its suitability for practical applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Huan Yang, Xiaoliang Zhou, Lei Lu, Shengdong Zhang
Summary: The carrier transport properties in amorphous oxide semiconductor (AOS) heterojunction thin-film transistors (TFTs) were investigated using dual gates to control the channel of bilayer AOSs. The mobility of the heterojunction channel depended on both the top-gate (TG) voltage (V-TG) and the bottom-gate (BG) voltage (V-BG). The high mobility of the AOS heterojunction channel was maintained in TG mode, but decreased with increased V-BG, indicating the importance of the gate field direction.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Sisi Wang, Man Wong
Summary: The incompatibility issues of materials and processes for the monolithic integration of low-temperature polysilicon (LTPS) and amorphous metal-oxide thin-film transistors are addressed by using a stacked-interconnect technique, resulting in low specific contact resistance for both transistors. This approach allows for more consistent transistor characteristics and enables the demonstration of inverters with a gain of 40 V/V and rail-to-rail full swing.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Li'ang Deng, Lei Han, Bang Ouyang, Xiaokuan Yin, Xiaojun Guo
Summary: The industry-standard amorphous metaloxide-semiconductor (AOS) thin-film transistor (TFT) technology is proven to be capable of producing low-voltage high intrinsic gain devices. The simulation and measurement results demonstrate that AOS TFTs can achieve large output resistance and high intrinsic gain without the need for Schottky barrier contacts. This technology has the potential for application in weak signal detection with a voltage gain larger than 50 at a supply voltage of 5 V.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Ji Ye Lee, Sang Yeol Lee
Summary: Amorphous oxide-based thin-film transistors (TFTs) have been successfully fabricated and analyzed, showing increased electrical mobility and stability. By inserting a-SIZO conductive semiconductor layer into a bilayer TFT, an improved field effect mobility has been achieved. The study achieved a mobility higher than 160 cm(2)/V center dot s with a Vth shift of 1.19 V for an amorphous-based semiconducting multilayer TFT under negative bias temperature stress (NBTS).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Ju Young Park, Haesung Kim, Han Bin Yoo, Ji Hee Ryu, Seung Hyeop Han, Jong-Ho Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim
Summary: This study proposes a technique for simultaneous and consistent extraction of the mobility enhancement factor (μ) and the threshold voltage (V_T) with parasitic source and drain resistances (RS and RD) in amorphous oxide semiconductor (AOS) thin film transistors (TFTs). The technique allows for the extraction of RS from RD as well as the accurate extraction of VT and μ with only I-V characteristics of the saturation operation in a single AOS TFT. The technique was applied to amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with various structures, and the extracted parameters were compared with those extracted by other methods for verification. The drain current (ID) was well reproduced using the extracted parameters regardless of the value of the external resistor (R_ext).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Shilu Yue, Jianguo Lu, Rongkai Lu, Siqin Li, Bojing Lu, Xifeng Li, Jianhua Zhang, Yu-Jia Zeng, Zhizhen Ye
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2018)
Article
Engineering, Electrical & Electronic
Shilu Yue, Jianguo Lu, Rongkai Lu, Siqin Li, Bojing Lu, Yi Zhao, Xifeng Li, Jianhua Zhang, Zhizhen Ye
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2019)
Article
Materials Science, Multidisciplinary
Bojing Lu, Yangdan Lu, Hangjian Zhu, Jiaqi Zhang, Shilu Yue, Siqin Li, Fei Zhuge, Zhizhen Ye, Jianguo Lu
Article
Engineering, Electrical & Electronic
Cheng Wang, Junsen Zhang, Jipeng Duan, Li Gong, Jie Wu, Liangxiang Jiang, Conghua Zhou, Haipeng Xie, Yongli Gao, Haiping He, Jianguo Lu, Zhishan Fang, Bojing Lu
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2020)
Article
Engineering, Electrical & Electronic
Xiaohan Cheng, Bojing Lu, Jianguo Lu, Siqin Li, Rongkai Lu, Shilu Yue, Lingxiang Chen, Zhizhen Ye
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Nanoscience & Nanotechnology
Rongkai Lu, Jianguo Lu, Xishuo Wei, Shilu Yue, Siqin Li, Bojing Lu, Yi Zhao, Liping Zhu, Lingxiang Chen, Zhizhen Ye
ADVANCED ELECTRONIC MATERIALS
(2020)
Article
Physics, Multidisciplinary
Bojing Lu, Rumin Liu, Siqin Li, Rongkai Lu, Lingxiang Chen, Zhizhen Ye, Jianguo Lu
CHINESE PHYSICS LETTERS
(2020)
