期刊
APPLIED MATERIALS TODAY
卷 19, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apmt.2020.100626
关键词
Memristor; Redox-active ligand; Electrode engineering; In-situ spectroscopy
资金
- NGS
- SERB, India [SR/S2/JCB-09/2011, EMR/2014/000520]
- Science Foundation Ireland (SFI) [15/CDA/3491, 12/RC/2275]
- [NRF-CRP15-2015-01]
The physicochemical properties of a molecule-metal interface, in principle, can play a significant role in tuning the electronic properties of organic devices. In this report, we demonstrate an electrode engineering approach in a robust, reproducible molecular memristor that enables a colossal tunability in both switching voltage (from 130 mV to 4 V i.e. >2500% variation) and current (by similar to 6 orders of magnitude). This provides a spectrum of device design parameters that can be dialed-in to create fast, scalable and ultralow energy organic memristors optimal for applications spanning digital memory, logic circuits and brain-inspired computing. (C) 2020 Elsevier Ltd. All rights reserved.
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