X-Ray Topography-More than Nice Pictures

X-ray topography-a well-known diffraction imaging method-is widely used for the characterization of extended crystal defects like dislocations. Herein, the progress toward the quantification besides the number and nature of dislocations is given. The diffracted images include additional information about tilt and strain, which can be measured in real-time, thanks to the improved digital detection systems. This allows not only the fast mapping of huge samples like 450 mm diameter Si wafers, the in situ observation of the dislocation, or crack dynamics at high temperatures, but also the stress analysis in electronic devices in operando. In addition to typical white X-ray beam methods like stacks of section topographs, the monochromatic diffraction laminography allows a 3D representation of the dislocation arrays. The merits and limitations of X-ray topography are demonstrated by semiconductor materials as an example.