期刊
RADIATION PHYSICS AND CHEMISTRY
卷 170, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.radphyschem.2019.108644
关键词
Solution-processed; High-k gate dielectric; AlOx capacitor; Biased gamma-ray radiation stress stability; On-site radiation measurements
资金
- National Natural Science Foundation of China [21503169, 2175011441, 61704111]
- Natural Science Foundation of Guangdong province [2017A030310524]
- Guangdong Research Center for Interfacial Engineering of Functional Materials [201701]
- Suzhou Science and Technology programme [SYG201623]
- Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology [RR0140]
- Natural Science Foundation of SZU [2017001]
- Key Program Special Fund in XJTLU [KSF-A-04, KSF-A-05, KSF-A-07, KSF-P-02, KSF-T-03]
- XJTLU Research Development Fund [RDF-14-02-42, RDF-17-01-13]
- British Council UKIERI [IND/CONT/G/17-18/18]
- UKRI GIAA award
- EPSRC [EP/K018884/1] Funding Source: UKRI
The effect of annealing temperature on the properties of aqueous solution-processed AlOx thin films is reported in this paper. Specifically, the stability of AlOx based Metal Oxide Semiconductor (MOS) capacitor devices under bias-stress (BS) and biased radiation stress (BRS) were assessed by an on-site technique with bias stress time up to 10(5) s. A 662-keV Cs-137 gamma-ray radiation source was used, with circa 92 Gy, for biased radiation stress experiments. In order to better understand the origin of degradation mechanisms, the build-up of charge and generation of defects during the BS and BRS were analyzed by calculation of the variation of oxide trap density (Delta N-ot) in AlOx bulk and interface trap density (Delta N-it) at the oxide/semiconductor interface. It is been found that high annealing temperature (> 250 degrees C) can result in the formation of AlOx thin films with reduced impurities, low leakage current, and satisfactory BS as well as BRS stability. The results of Delta N-ot and Delta N-it vs stress time indicate that AlOx bulk oxide traps dominate the shift of flat-band voltage (V-FB) under BRS. Furthermore, Delta N-ot and Delta N-it decrease slightly under positive biased radiation stress (PBRS), while the increase in Delta N-ot and Delta N-it concentrations observed under negative biased radiation stress (NBRS), exhibits a mechanism which differs from the traditional two-stage process theory.
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