Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

出版年份 2016 全文链接

标题

作者

关键词

C. Electrical properties, Metal-oxide-semiconductor, Sol–gel, Conduction mechanisms, High-k gate dielectrics

出版物

Volume 42, Issue 1, Pages 759-766

出版商

Elsevier BV

发表日期

2015-09-12

DOI

10.1016/j.ceramint.2015.08.177

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