Article
Engineering, Electrical & Electronic
V. R. Sreelakshmi, A. Anu Kaliani, M. Jithin
Summary: VO-MO composite thin films with different compositions of vanadium oxide and molybdenum oxide (VO75% MO25%, VO50% MO50% and VO25% MO75%) were fabricated by thermal evaporation method. The films exhibited photochromic properties and multicolorism under sunlight irradiation, and showed good reversibility on bleaching. The VO50% MO50% composition showed better photochromic and hydrophilic properties.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Yusuf Tutel, Mete Batuhan Durukan, Serife O. Hacioglu, Umran Ceren Baskose, Levent Toppare, Husnu Emrah Unalan
Summary: This study demonstrates the use of ultrasonic spray deposition method to prepare bare MoO3 and cobalt-doped MoO3 thin films for electrochromic (EC) applications. Cobalt doping significantly improves the cyclic stability of the films. Moreover, MoO3:Co films show excellent performance in dual-band electrochromic devices with high capacitance retention and transmittance change.
APPLIED MATERIALS TODAY
(2023)
Article
Chemistry, Inorganic & Nuclear
Jordan D. Levine, Meredith C. Sharps, Elizabeth A. Cochran, David A. Marsh, William H. Casey, Darren W. Johnson
Summary: The study found that a novel inorganic nanoscale cluster can serve as a precursor for aluminum cobalt oxide films, which exhibit relatively smooth surfaces and polycrystalline structures, with a tunable optical response dominated by Co3O4.
DALTON TRANSACTIONS
(2021)
Article
Materials Science, Multidisciplinary
F. Roulland, G. Roseau, A. Pena Corredor, L. Wendling, G. Krieger, C. Lefevre, M. Trassin, G. Pourroy, N. Viart
Summary: Transition metal complex oxides exhibit rich tunable physical properties due to their strongly correlated electrons. Epitaxial thin films of magnetically frustrated FeV2O4 spinel vanadate compound were prepared through pulsed laser deposition. Optimizing oxygen pressure deposition conditions was crucial to avoid over-oxidation and oxygen vacancies. The compressive stress induced by MgO substrates led to unexpected lattice parameter reduction and increased magnetic transition temperature in the films. Strain tuning the magnetic order in these films opens up new possibilities for integration in oxide electronics.
MATERIALS CHEMISTRY AND PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
S. Levcenko, B. Teymur, D. B. Mitzi, T. Unold
Summary: Characterization of radiative transitions in trigonal Cu2BaSnS4 was experimentally studied via temperature and excitation intensity dependent photoluminescence measurements, revealing the contributions of free exciton, bound exciton, donor-acceptor-pair recombination, and free-to-bound transition. The activation energies and temperature shift for the radiative transitions were determined, with optical phonons playing a significant role in the energy shift of free exciton recombination above 90 K.
Article
Crystallography
Els Bruneel, Hannes Rijckaert, Javier Diez Sierra, Klaartje De Buysser, Isabel Van Driessche
Summary: This work discusses the development of an analysis routine for evaluating the nanoparticle distribution in nanocomposite thin films. YBa2Cu3O7-delta (YBCO) nanocomposite films were synthesized via a chemical solution deposition approach starting from colloidal YBCO solutions with preformed nanoparticles. The distribution of the nanoparticles and interlayer diffusion are evaluated with X-ray photoelectron spectroscopy (XPS) depth profiling and compared with cross-sectional transmission electron microscopy (TEM) images. It is shown that the combination of both techniques deliver valuable information on the film properties as nanoparticle distribution, film thickness and interlayer diffusion.
Article
Materials Science, Ceramics
Alfredo Blazquez Martinez, Nicolas Godard, Naveen Aruchamy, Cosme Milesi-Brault, Oana Condurache, Andreja Bencan, Sebastjan Glinsek, Torsten Granzow
Summary: In this study, polycrystalline Mn and Ti co-doped BiFeO3 thin films were fabricated on platinized silicon substrates by a solution deposition method, with PbTiO3 nanocrystals used as a seed layer to induce a preferential (100) pseudocubic orientation. The introduction of a PbTiO3 seed layer significantly reduced the leakage current and resulted in excellent room-temperature ferroelectric properties in the thin films.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2021)
Review
Chemistry, Multidisciplinary
Bingbing Yang, Linghua Jin, Renhuai Wei, Xianwu Tang, Ling Hu, Peng Tong, Jie Yang, Wenhai Song, Jianming Dai, Xuebin Zhu, Yuping Sun, Shujun Zhang, Xiaolin Wang, Zhenxiang Cheng
Summary: This paper summarizes the development of bismuth ferrite thin films in recent years, introduces the method and challenges of chemical solution route preparation. It also proposes an all-solution chemical-solution deposition (AS-CSD) method to prepare ferroelectric films with different orientations, and studies their growth, structure, and ferroelectric properties.
Article
Chemistry, Physical
Ahmed M. El-Mahalawy, Fatma M. Amin, Ahmed R. Wassel, Mohamed Abd - El Salam
Summary: The photovoltaic performance of CdS/SnS solar cells was improved by decorating with plasmonic nanoparticles, leading to enhanced optical absorption and reflection. The efficiency of the solar cells was significantly increased through engineering, with remarkable improvements in Voc and Jsc values.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Physics, Applied
M. Jullien, C. S. Chang, L. Badie, S. Robert, M. Hehn, D. Lacour, F. Montaigne
Summary: Cobalt thin films were grown using plasma-enhanced atomic layer deposition, with investigations into their electrical and magnetic properties as a function of growth temperature. It was found that the magnetic and resistivity properties of the films varied with growth temperature, with an optimal growth temperature of 340 degrees C. The study suggests that atomic layer deposition may be a viable alternative for depositing ferromagnetic layers in spintronics applications.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Syed Mansoor Ali, Abdullah Almohammedi, M. S. AlGarawi, S. S. AlGhamdi, H. Kassim, Fahad N. Almutairi, Asif Mahmood, Khalid Saeed
Summary: The effects of Sn doping on the characteristics of p-type CuI thin films were investigated. XRD analysis confirmed the formation of gamma-phase cubic structure with a preferred orientation along (111) XRD plane. FESEM observations showed that surface morphology and grain size varied with doping concentration. The estimated energy bandgap increased from 2.42 to 2.65 eV with Sn doping. The PL results indicated a reduction in peak intensity with increasing doping level. Hall analysis revealed an improvement in electrical conductivity and carrier concentration with Sn doping. These findings suggest that Sn-doped CuI thin films are suitable as hole transport layers in perovskite solar cells.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Kipkurui Ronoh, Saleh H. Fawaeer, Vladimir Holcman, Alexandr Knapek, Dinara Sobola
Summary: An experimental investigation of electron beam physical vapour deposition of Ti, Au, and Ag metals on HOPG substrate to form HOPG-M thin films was conducted. The films were characterized using various techniques, revealing differences in morphology, topography, and surface chemistry among the metals. Raman and FTIR analyses showed variations in molecular structures and the presence of different functional groups on the thin films. The findings suggest the potential of HOPG as a substrate for preparing various M thin films.
Article
Materials Science, Multidisciplinary
Sangita Bhowmick, Rajib Saha, Madhuri Mishra, Ankita Sengupta, Sanatan Chattopadhyay, Subhananda Chakrabarti
Summary: The impact of oxygen concentration on the structural, optical properties, and device performance of Ga2O3 thin film was investigated by controlling the oxygen flow rate during deposition. Higher oxygen flow rate led to poorer crystalline quality, increased film roughness, and introduction of defects. Decreasing oxygen concentration resulted in an increase in optical bandgap, a decrease in blue band contribution, and reduced defect concentration, surface roughness, and interface states. These findings are significant for improving the quality of Ga2O3 films and their applications in device fabrication.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Vidyadevi A. Jundale, Dilip A. Patil, Abhijit A. Yadav
Summary: The effects of precursor solution concentration on the physical and electrochemical characteristics of NiFe2O4 films were investigated. The results showed that the films exhibited a spinel cubic crystal structure, mesoporous morphology, and nearly stoichiometric deposition. Additionally, the films demonstrated favorable electrochemical performance and stability under specific conditions.
JOURNAL OF MATERIALS RESEARCH
(2023)
Article
Chemistry, Multidisciplinary
Manchen Hu, Emma Belliveau, Yilei Wu, Pournima Narayanan, Demeng Feng, Rabeeya Hamid, Natalia Murrietta, Ghada H. Ahmed, Mikhail A. Kats, Daniel N. Congreve
Summary: The deposition of a bulk heterojunction upconversion film using organic semiconductors has been achieved through a single-step solution-processed method. This materials system shows great promise for solid-state upconversion applications.
Article
Chemistry, Physical
Angelica Garzon-Fontecha, Harvi A. Castillo, Mario Curiel, Ana Gabriela Montano-Figueroa, Manuel A. Quevedo-Lopez, Leonel Cota-Araiza, Wencel De La Cruz
Summary: A methodology was established to synthesize SnO(x) thin films with tunable conductivity via DC magnetron sputtering, transitioning from p-type to n-type by adjusting oxygen partial pressure and working pressure. The optimal conditions were found to deposit both types of thin films with the same structure and stoichiometry, achieving high mobility values for fabrication. Implementation of a SnOx-based p-n diode using the developed transparent SnO(x) thin films showcased their potential in transparent electronics.
SURFACE AND INTERFACE ANALYSIS
(2021)
Article
Engineering, Electrical & Electronic
F. J. Ochoa-Estrella, A. Vera-Marquina, A. L. Leal-Cruz, I. Mejia, M. I. Pintor-Monroy, M. Martinez-Gil, M. Quevedo-Lopez
Summary: Heterojunctions made of n-type cadmium sulfide (CdS) and p-type zinc telluride (ZnTe) thin films with rectifying behavior were successfully developed using an in situ approach based on pulsed laser deposition (PLD). The structure and properties of the CdS and ZnTe thin films were characterized through X-ray diffraction and electrical measurements, showcasing potential applications in photodetector development by modifying carrier concentration differences between the two materials.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
L. F. Mulcue, W. de la Cruz, W. Saldarriaga
Summary: Different thicknesses of In0.63Al0.37 N layers were synthesized on glass substrates, showing varying structural and morphological properties of polycrystalline films. Hall effect measurements revealed a similar behavior between carrier density and grain size, indicating the potential application of polycrystalline InxAl1-xN films in solar cells.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Chemistry, Physical
K. P. Valdez, H. A. Castillo, Leonel Cota, J. H. Quintero-Orozco, E. Restrepo-Parra, Wencel de la Cruz
Summary: This study investigated the influence of CH4/Ar flow ratio on TaCx coatings, revealing a strong impact on the crystallinity and stoichiometry of the coatings. Low CH4/Ar ratios resulted in sub-stoichiometric coatings, while high ratios led to a decrease in hardness.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Multidisciplinary
Jorge A. Garcia-Valenzuela, Martha R. Baez-Gaxiola, Marcos Cota-Leal
Summary: By adding a small amount of Al-2(SO4)(3) solution into the reaction solution, the adhesion problem between CdS thin films and tin-free glass and silicon wafers can be solved, without the need for additional toxic cadmium salt or complex processing steps.
Article
Engineering, Electrical & Electronic
L. F. Mulcue Nieto, W. Saldarriaga, W. de la Cruz, E. Restrepo, M. S. Ospina, D. Escobar
Summary: The research explores the feasibility of using InAlN for synthesizing the window layer of solar cells, considering the design and structure of different types of solar cells.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Physics, Multidisciplinary
Gabriel R. Castillo, Cecilia Burshtein, Gottlieb Uahengo, Elias H. Penilla, Yasmin Esqueda-Barron, M. Martinez-Gil, Wencel de la Cruz, Javier E. Garay, Santiago Camacho-Lopez
Summary: Thermally resilient planar waveguides were fabricated on nc-YSZ by direct fs-laser inscription in transparent nc-yttria stabilized zirconia (nc-YSZ) polycrystalline ceramic. Post-waveguide-fabrication thermal annealing treatments maintained the waveguides' resilience and reduced losses, showing potential for use in harsh and high temperature demanding photonic environments. Micro-Raman spectroscopy and XPS characterization confirmed the unchanged lattice and steady chemical features, supporting the waveguides' thermal resilience.
FRONTIERS IN PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
A. Olivas, J. R. Rodriguez, F. Cardenas-Lizana, M. Cota-Leal, M. A. Keane
Summary: Nanostructured nickel and nickel sulfide-based catalysts were synthesized and studied for the selective hydrogenation of p-chloronitrobenzene. The addition of sulfur promoted the selectivity towards p-chloroaniline.
CHALCOGENIDE LETTERS
(2022)
Article
Energy & Fuels
M. A. Armenta, V. M. Maytorena, D. A. Buentello-Montoya, E. Arroyo, M. Cota-Leal, D. Yong, A. Olivas
Summary: In this study, microagglomerates of PdO and Mn2O3 supported over gamma-chi-Al2O3 were synthesized via the impregnation method for the methanol dehydration to dimethyl ether. The presence of 3% PdO (Pd2+) over gamma-chi-Al2O3 resulted in high conversions and selectivity at a lower temperature, attributed to a higher density of moderate acid sites. The size of PdO agglomerates also affected the mass transfer rates in the reaction. The stability of the PdO/gamma-chi-Al2O3 catalyst was correlated with its low apparent activation energy and the inactive phase change of PdO after the reaction.
Article
Materials Science, Multidisciplinary
Zeuz Montiel-Gonzalez, Obed Yamin Ramirez-Esquivel, Dagoberto Cabrera-German, Jorge Alejandro Torres-Ochoa, Axel Agustin Ortiz-Atondo, Dalia Alejandra Mazon-Montijo
Summary: This study explores the relationship between the structural and chemical properties of SILAR-deposited CuS-cov films, and assesses their impact on the Mid Infrared (MIR) response. The results demonstrate that the thickness, crystallinity, and composition of the CuS-cov films have an effect on their optical behavior in the MIR, with reflectivity reaching 80%. Furthermore, these films have low emissivity, making them suitable for low-emissivity coatings.
Article
Multidisciplinary Sciences
A. L. Aguayo-Alvarado, F. Dominguez-Serna, W. De La Cruz, K. Garay-Palmett
Summary: This work presents a feasible design of an integrated photonic circuit for single-qubit preparation and rotations using the nonlinear process of difference frequency generation. The circuit consists of two stages: generating heralded single photons through spontaneous four-wave mixing in a micro-ring cavity, and implementing difference frequency generation in a spiral waveguide with controlled dispersion properties. The design methodology, the generalized rotation operator, and the qubit preparation fidelity results are also presented.
SCIENTIFIC REPORTS
(2022)
Article
Materials Science, Ceramics
M. Martinez-Gil, D. Cabrera-German, M. Rodriguez-Curiel, N. Abundiz-Cisneros, E. Vargas-Viveros, L. Cota, W. De la Cruz
Summary: Thermally processed nickel oxide (NiO) thin films were synthesized from nickel hydroxide films obtained by chemical solution deposition. The potential applications of the films were studied through controlled annealing atmospheres. The NiO films exhibited high optical transmittance, amorphous structure, and suitable electrical properties for transparent electronic devices.
JOURNAL OF NON-CRYSTALLINE SOLIDS
(2023)
Article
Optics
ChJ. Salas-Juarez, S. E. Burruel-Ibarra, M. I. Gil-Tolano, A. Perez Rodriguez, F. Romo-Garcia, A. R. Garcia-Haro, F. Brown, M. Yacaman-Valdez, J. L. Iriqui-Razcon, M. Martinez-Gil, R. Melendrez
Summary: In this study, we synthesized ZrO2:Tb3+ samples via a conventional solid-state reaction and investigated their Persistent Luminescence (PLUM) and performance in radiation dosimetry. X-ray diffraction confirmed the formation of monoclinic phase ZrO2 and the presence of Tb3+ ions and Tb2O3 in the samples. The PLUM response of the ZrO2:Tb3+ 1% sample was measured for 600 s after exposure to beta particle irradiation in the dose range of 0.5 to 256 Gy. The integrated area of the PLUM decay curves showed a sublinear dependence within the dose range of 0.5 to 64 Gy. The TL glow curve of the ZrO2: Tb3+ 1% sample exhibited two maxima at 79 and 150 degrees C, indicating that trapping states associated with the 79 degrees C maximum are responsible for the PLUM emission at room temperature. Computational deconvolution analysis revealed that the 79 degrees C maximum consisted of two traps with first-order kinetics. These results suggest that the ZrO2:Tb3+ 1% sample holds potential as a dosimeter for beta particle irradiation.
JOURNAL OF LUMINESCENCE
(2023)
Article
Materials Science, Multidisciplinary
Jeisson Javier Solis-Mosquera, Dagoberto Cabrera-German, Hisila Santacruz-Ortega, Monica Alessandra Acosta-Elias, Merida Sotelo-Lerma
Summary: A method for synthesizing lead iodide through chemical bath deposition without the use of organic solvents is presented in this study. The process involves three stages: producing tin hydroxide films as a seed layer, synthesizing lead iodide films, and annealing to induce polytypic transitions and investigate their effects on material properties. Various characterization techniques reveal the influence of annealing on the induction of polytypes. The resulting PbI2 films show wide-area coverage, wide-bandgap, and a structure belonging to the 2H and 4H polytypes, making them promising candidates for large-scale optoelectronic applications.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Green & Sustainable Science & Technology
Luis Medina-Zazueta, F. C. Miranda-Castro, F. Romo-Garcia, M. Martinez-Gil, H. E. Esparza-Ponce, D. Encinas-Basurto, Jaime Ibarra
Summary: Vallesia glabra (Vg) leaf extract can be used to synthesize magnetic adsorbents for the removal of cationic dyes from aqueous solutions.
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)