Article
Materials Science, Multidisciplinary
Haibo Gan, Qiaoyan Hao, Jidong Liu, Peng Li, Dianyu Qi, Fei Liu, Ting Lei, Wenjing Zhang
Summary: 2D semiconductors, such as copper-indium-selenide (CIS) nanoflakes, show promising potential for future photodetector applications due to their high sensitivity in the visible and near-infrared regions. The CIS nanoflakes exhibit high photoresponsivity, external quantum efficiency, and specific detectivity, making them competitive among current 2D materials. The epitaxial growth of CIS nanoflakes by chemical vapor deposition has successfully optimized light absorption, suggesting potential for future near-infrared photodetector applications.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Crystallography
Theresa E. Saenz, Manali Nandy, Agnieszka Paszuk, David Ostheimer, Juliane Koch, William E. McMahon, Jeramy D. Zimmerman, Thomas Hannappel, Emily L. Warren
Summary: By studying the surface structure and chemical composition of V-groove Si, it is found that different pretreatment methods can be used to deoxidize and clean the V-groove Si surface, demonstrating that the behavior of V-groove Si is similar to that of reference samples of planar Si surfaces, providing a basis for future studies.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Chemistry, Multidisciplinary
Anushka Bansal, Nadire Nayir, Ke Wang, Patrick Rondomanski, Shruti Subramanian, Shalini Kumari, Joshua A. Robinson, Adri C. T. van Duin, Joan M. Redwing
Summary: Ultrathin 2D-GaNx can be formed by Ga intercalation into epitaxial graphene followed by nitridation. The influence of graphene layer thickness and chemical functionalization on Ga intercalation and 2D-GaNx formation is examined using experimental and theoretical studies.
Article
Chemistry, Multidisciplinary
Yahuan Huan, Tiantian Luo, Xiaocang Han, Jun Ge, Fangfang Cui, Lijie Zhu, Jingyi Hu, Feipeng Zheng, Xiaoxu Zhao, Lili Wang, Jian Wang, Yanfeng Zhang
Summary: This study reports the composition-controllable synthesis of 2D non-layered iron selenide nanosheets and explores their fundamental properties as self-intercalation induced novel TMDs compounds, providing a new direction for their application explorations in nanoelectronics and spintronics-related fields.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Soyoon Kim, Jungbok Lee, Hyungsoo Ahn, Kyounghwa Kim, Min Yang
Summary: Ga2O3 thin films were hetero-epitaxially grown on 4H-SiC substrates using MOCVD. The crystal quality of the epsilon-Ga2O3 thin films grown on Si-face and C-face of 4H-SiC substrates was compared. Results showed that the epsilon-Ga2O3 film grown on a Si-face substrate exhibited better crystal quality compared to growth on a C-face. Annealing the epsilon-Ga2O3 thin film in an oxygen atmosphere transformed the crystal phase and significantly reduced the roughness.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Multidisciplinary
Mengting Song, Nan An, Yuke Zou, Yue Zhang, Wenjuan Huang, Huayi Hou, Xiangbai Chen
Summary: In this study, high-quality epitaxial growth of few-layer gallium selenide (GaSe) nanoflakes with different thicknesses was achieved using chemical vapor deposition (CVD) method. The grown GaSe nanoflakes exhibited excellent second harmonic generation (SHG) due to their non-centrosymmetric structure. Additionally, the constructed GaSe nanoflake-based photodetector demonstrated stable and fast response under visible light excitation, with a rise time of 6 ms and decay time of 10 ms. These achievements clearly indicate the potential of GaSe nanoflakes in nonlinear optics and (opto)-electronics applications.
FRONTIERS OF PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Marcel S. Claro, Justyna Grzonka, Nicoleta Nicoara, Paulo J. Ferreira, Sascha Sadewasser
Summary: The 2D material beta-In2Se3 shows excellent material quality and device performance when grown on c-sapphire substrate, making it suitable for mass production of photodetectors.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Bela Pecz, Giuseppe Nicotra, Filippo Giannazzo, Rositsa Yakimova, Antal Koos, Anelia Kakanakova-Georgieva
Summary: This study successfully demonstrates the formation of 2D InN and measures its bandgap, showing a wide bandgap and high lateral uniformity of intercalation.
ADVANCED MATERIALS
(2021)
Article
Crystallography
J. E. Ruiz, D. Lackner, P. L. Souza, F. Dimroth, J. Ohlmann
Summary: The growth of dilute nitrides with metal organic chemical vapor phase epitaxy (MOVPE) faces challenges of low N-incorporation and high impurity levels of carbon and hydrogen. Investigation into N and C-incorporation in GaNxAs1-x showed that N-incorporation is proportional to the N/As ratio, while C primarily comes from group-III-methyl groups.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
C. R. Tait, S. R. Lee, J. Deitz, M. A. Rodriguez, D. L. Alliman, B. P. Gunning, G. M. Peake, A. Sandoval, N. R. Valdez, P. R. Sharps
Summary: Progress has been made in the synthesis of semimetal Cd3As2 by metal-organic chemical-vapor deposition (MOCVD), with optimized growth conditions revealing that InAs-terminated substrates yield the most desirable results. Advanced imaging techniques and x-ray diffraction modalities have been utilized to extensively study the microstructure of Cd3As2 thin films, showing smooth and specular surfaces with low roughness. The films exhibit strain relaxation and belong to the P4(2)/nbc space group, positioning MOCVD-grown Cd3As2 as a Dirac semimetal of interest for topological quantum materials research.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Kazutada Ikenaga, Nami Tanaka, Taro Nishimura, Hirotaka Iino, Ken Goto, Masato Ishikawa, Hideaki Machida, Tomo Ueno, Yoshinao Kumagai
Summary: The effect of high temperature homoepitaxial growth of (010) beta-Ga2O3 layer by low pressure hot-wall metal-organic vapor phase epitaxy was investigated. The growth rate decreased and the growth mode changed as the growth temperature increased. A smooth, twin-free single-crystalline homoepitaxial layer with a structural quality equivalent to that of the substrate could be grown at 1000 degrees C. The grown layers were all n-type and showed an effective donor concentration approximately equal to the Si impurity concentration.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Enrico Brugnolotto, Markus Scherrer, Heinz Schmid, Vihar Georgiev, Marilyne Sousa
Summary: Template assisted selective epitaxy (TASE) is a promising technique for integrating III-V semiconductors on Si, providing reduced defect density and versatility in fabricating electronic and photonic devices. This study demonstrates the control of composition and morphology of InGaAs quantum wells embedded in a horizontal InP nanowire grown directly on Si, as well as the characterization of heterointerfaces. By varying the precursor switching sequence and utilizing scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, a type I superlattice enclosed in a silicon oxide template was successfully created and analyzed.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Crystallography
Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Russell D. Dupuis
Summary: This study aims to investigate the unintentional impurity incorporation in GaN epitaxial layers and optimize the growth conditions to reduce background impurity concentrations. The results show that the unintentional incorporation of carbon and silicon impurities is highly dependent on the growth parameters. The use of TEG precursor can reduce the carbon concentration, while the lowest concentration can be achieved with TMG precursor under optimized conditions. Similarly, the lowest background silicon concentration can be achieved with TMG precursor under specific conditions.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Crystallography
Hidetoshi Nakahata, Rie Togashi, Ken Goto, Bo Monemar, Yoshinao Kumagai
Summary: The study investigated the influence of growth conditions on the halide vapor phase epitaxy of In2O3 on sapphire substrates. It was found that growth temperature and input partial pressure of source gas play a crucial role in determining the growth rate, crystal orientation, and purity of the grown layers. The layers grown at higher temperatures exhibited different preferred orientations and surface characteristics, with the highest growth rate exceeding 10 μm/h at 1000 degrees C.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
J. T. Boyer, A. N. Blumer, Z. H. Blumer, D. L. Lepkowski, T. J. Grassman
Summary: This study examined the impact of key parameters in metal-organic chemical vapor deposition (MOCVD) on GaP/Si heteroepitaxy, particularly focusing on Si surface preparation and GaP atomic layer epitaxy (ALE) nucleation processes. The results showed that the Si surface preparation method had little effect on the GaP film morphology and defect content, while variations in GaP ALE nucleation conditions significantly influenced threading dislocation densities in thin GaP/Si films. The study also found a substantial range of stacking fault pyramid (SFP) densities, with no apparent causal relationship between SFP density and threading dislocation density.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Chemistry, Multidisciplinary
Anushka Bansal, Nadire Nayir, Ke Wang, Patrick Rondomanski, Shruti Subramanian, Shalini Kumari, Joshua A. Robinson, Adri C. T. van Duin, Joan M. Redwing
Summary: Ultrathin 2D-GaNx can be formed by Ga intercalation into epitaxial graphene followed by nitridation. The influence of graphene layer thickness and chemical functionalization on Ga intercalation and 2D-GaNx formation is examined using experimental and theoretical studies.
Article
Chemistry, Multidisciplinary
Ryan Selhorst, Zhuohang Yu, David Moore, Jie Jiang, Michael A. Susner, Nicholas R. Glavin, Ruth Pachter, Mauricio Terrones, Benji Maruyama, Rahul Rao
Summary: Layered Transition Metal Dichalcogenides (TMDs) are important materials with a diverse range of optoelectronic properties. This study investigates the spatial tailoring of TMDs through electron-beam patterning, achieving high resolution and demonstrating potential for nanoscale functionalization. The modulated properties were found to be dependent on various parameters, and the results were confirmed through spectroscopic analysis and density functional theory modeling. This research provides a robust method for property modulation and functionalization of TMDs at the nanoscale.
Editorial Material
Chemistry, Physical
Nianjun Yang, Mauricio Terrones
Article
Nanoscience & Nanotechnology
Shayani Parida, Yongqiang Wang, Huan Zhao, Han Htoon, Theresa Marie Kucinski, Mikhail Chubarov, Tanushree Choudhury, Joan Marie Redwing, Avinash Dongare, Michael Thompson Pettes
Summary: Atomically thin transition metal dichalcogenides (TMDs), such as MoS2, are unique materials for next generation opto-electronic devices. Ion irradiation can be used to control the optoelectronic properties of 2D materials by manipulating atomistic defects.
Article
Nanoscience & Nanotechnology
Thomas F. Schranghamer, Andrew Pannone, Harikrishnan Ravichandran, Sergei P. Stepanoff, Nicholas Trainor, Joan M. Redwing, Douglas E. Wolfe, Saptarshi Das
Summary: Limitations in cloud-based computing have led to a shift towards all-in-one edge devices that can independently sense, compute, and store data. Advanced defense and space applications face challenges in maintaining remote oversight, making the development of such devices crucial. In this study, the effects of high-dose gamma radiation on MoS2-based memtransistors were investigated. The findings show that these devices are not severely impacted by gamma irradiation, even without dedicated shielding or mitigation techniques. This research serves as a foundation for future application-oriented studies.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Min Fu, Wei Chen, Yu Lei, Hao Yu, Yuxiao Lin, Mauricio Terrones
Summary: A general biomimetic mineralization synthetic strategy was proposed to synthesize ferrite quantum dot/graphene heterostructures. The optimized heterostructure exhibited exceptional capacitance and cycling performance, indicating its potential as advanced electrode materials for supercapacitors.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Inorganic & Nuclear
Katherine L. Thompson, Rowan R. Katzbaer, Mauricio Terrones, Raymond E. Schaak
Summary: Ion exchange reactions of colloidal nanoparticles allow for modification of composition while maintaining morphology and crystal structure, which is crucial for tuning properties and producing otherwise inaccessible materials. In this study, tellurium anion exchange of copper selenide nanoparticles was conducted, resulting in the formation of solid solutions with tunable compositions. The post-exchange reactivity of the solid solution nanoparticles, including transformation of composition, surface chemistry, and colloidal dispersibility, was observed due to the apparent metastability of the product.
INORGANIC CHEMISTRY
(2023)
Article
Chemistry, Physical
Nadire Nayir, Stephen Bartolucci, Tao Wang, Chen Chen, Joshua Maurer, Joan M. Redwing, Adri C. T. van Duin
Summary: Chemical vapor deposition (CVD) is used to produce high-quality MoS2 film on a silica substrate. ReaxFF simulations and DFT calculations provide an atomic insight into the coupling between surface chemistry and MoS2 growth. Experimental results indicate that hydroxyl groups on the silica surface enhance the reactivity with MoO3 and promote the nucleation and growth of MoS2. The presence of the substrate catalyzes the growth and lowers the growth temperature.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Physical
Jie Fang, Suichu Huang, Kan Yao, Tianyi Zhang, Mauricio Terrones, Wentao Huang, Yunlu Pan, Yuebing Zheng
Summary: Tunable exciton-photon couplings have been demonstrated in monolayer TMDs, showing strong bright-exciton-photon couplings and revealing the novel interactions between bright and dark exciton-photon hybrids in a single optical cavity. The waveguide mode can be tuned in wavelengths by controlling the spacer thickness, and the relative contribution from the antenna mode coupled with dark excitons can be dynamically enlarged by increasing the excitation angle. This study opens new possibilities in tunable QED and provides insights into the coexistence of bright and dark exciton-photon couplings.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Physical
Shannon McGee, Andres Fest, Cierra Chandler, Nabila N. Nova, Yu Lei, James Goff, Susan B. Sinnott, Ismaila Dabo, Mauricio Terrones, Lauren D. Zarzar
Summary: In this study, we synthesized multimetal catalysts using a laser synthesis method and found that adding a small amount of chromium to the catalyst can enhance the hydrogen evolution efficiency. This research provides new insights for future electrocatalytic design.
ACS APPLIED ENERGY MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Saiphaneendra Bachu, Malgorzata Kowalik, Benjamin Huet, Nadire Nayir, Swarit Dwivedi, Danielle Reifsnyder Hickey, Chenhao Qian, David W. Snyder, Slava V. Rotkin, Joan M. Redwing, Adri C. T. van Duin, Nasim Alem
Summary: By combining experiments and theory, we investigated the influence of stacking order and twist angle of CVD graphene on the nucleation of WSe2 crystals. We found that interlayer dislocations are present only in Bernal-stacked bilayer graphene, not in twisted bilayer graphene. The localized buckles in Bernal-stacked graphene serve as thermodynamically favorable sites for binding WSe x molecules, resulting in a higher nucleation density of WSe2.
Article
Chemistry, Multidisciplinary
Aaryan Oberoi, Ying Han, Sergei P. Stepanoff, Andrew Pannone, Yongwen Sun, Yu-Chuan Lin, Chen Chen, Jeffrey R. Shallenberger, Da Zhou, Mauricio Terrones, Joan M. Redwing, Joshua A. Robinson, Douglas E. Wolfe, Yang Yang, Saptarshi Das
Summary: This study presents a three-pronged approach to achieve high-performance p-type FETs based on synthetic WSe2, including contact engineering, channel length scaling, and monolayer doping. By using Pd as the contact metal and monolayer WOxSey as the p-type dopant, the ON-state performance of the FETs was significantly improved and the contact resistance was reduced.
Article
Chemistry, Multidisciplinary
Jie Fang, Kan Yao, Mingsong Wang, Zhuohang Yu, Tianyi Zhang, Taizhi Jiang, Suichu Huang, Brian A. Korgel, Mauricio Terrones, Andrea Alu, Yuebing Zheng
Summary: In this study, we achieved on-demand exciton-polariton emission from a wide range of TMDs at room temperature by hybridizing excitons with broadband Mie resonances. The system demonstrated stable polaritonic photoluminescence and multiple Rabi splittings.
Article
Chemistry, Multidisciplinary
Victor Carozo, Bruno R. Carvalho, Syed Hamza Safeer, Leandro Seixas, Pedro Venezuela, Mauricio Terrones
Summary: We investigated the electronic and phonon properties of few-layered Bi2Te3 systems with different layer thicknesses using Raman spectroscopy and first-principles calculations. The main Raman modes showed frequency dispersion and changes in intensity and lineshape with the variation of layer thickness and excitation energy. Resonant Raman conditions were reached for certain thicknesses due to van Hove singularities at the electronic density of states. Our results demonstrate the significant influence of layer numbers on the Raman scattering mechanics in Bi2Te3 systems.
NANOSCALE ADVANCES
(2023)
Article
Chemistry, Multidisciplinary
Raj Kumar, Cristian V. Ciobanu, Somilkumar J. Rathi, Joseph E. Brom, Joan M. Redwing, Frank Hunte
Summary: This study reports on the manifestations of superconducting electrons carried by topological surface states (TSS) in Bi2Se3 films. By measuring the magnetoresistance (MR) and anisotropic magnetoresistance (AMR), key features of TSS-carried Cooper pairs are uncovered. These findings can guide novel developments in superconductor/topological insulator quantum devices relying on supercurrent detection and lead to more refined transport signatures of Majorana zero-modes in the future.
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)
