Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications

出版年份 2020 全文链接

标题

作者

关键词

出版物

Volume 67, Issue 3, Pages 1285-1292

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-02-06

DOI

10.1109/ted.2020.2964428

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