Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes
出版年份 2019 全文链接
标题
Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes
作者
关键词
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出版物
Advanced Optical Materials
Volume -, Issue -, Pages 1901632
出版商
Wiley
发表日期
2019-11-25
DOI
10.1002/adom.201901632
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene
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