期刊
SEMICONDUCTORS
卷 53, 期 11, 页码 1415-1418出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782619110204
关键词
GaN; ion irradiation; defect engineering; chemical effects
资金
- Russian Foundation for Basic Research [18-08-01213]
The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.
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