Article
Materials Science, Multidisciplinary
Zegao Wang, Xuya Xiong, Jiheng Li, Mingdong Dong
Summary: By introducing an rGO buffer layer in MoS2 transistors, van der Waals contacts can be formed effectively, leading to a significant improvement in device performance.
MATERIALS TODAY PHYSICS
(2021)
Article
Chemistry, Physical
Huawei Liu, Lizhen Fang, Xiaoli Zhu, Chenguang Zhu, Xingxia Sun, Gengzhao Xu, Biyuan Zheng, Ying Liu, Ziyu Luo, Hui Wang, Chengdong Yao, Dong Li, Anlian Pan
Summary: A novel contact strategy using Bi2Te3 nanosheets as van der Waals contacts on MoS2 is proposed in this study to address the poor contact quality issue in two-dimensional semiconductor-based field effect transistors (FETs). The results show that the MoS2 FET device with Bi2Te3 contacts exhibits higher performance and smaller Schottky barrier height.
Article
Chemistry, Physical
Yu Shu, Kaijun He, Rui Xiong, Zhou Cui, Xuhui Yang, Chao Xu, Jingying Zheng, Cuilian Wen, Bo Wu, Baisheng Sa
Summary: In this study, the electronic property and Schottky barrier of graphene/GeN3 van der Waals (vdW) heterostructure were investigated using first-principles calculations. It was found that the p-type Schottky contact in the heterostructure can be effectively tuned by both vertical and horizontal strains. Furthermore, the optoelectronic field-effect transistor based on the heterostructure exhibited distinguished responsivity and impressive external quantum efficiency.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Sicheng Jing, Wen Chen, Jinghua Pan, Wei Li, Baoan Bian, Bin Liao, Guoliang Wang
Summary: In this study, the electronic properties of Van der Waals heterojunctions based on InSe and borophene were investigated using first principle calculations. The results showed that the electronic structures and transport properties of the heterostructure can be modulated by controlling the interlayer distance and applying an external electric field.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Xiankun Zhang, Huihui Yu, Wenhui Tang, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang, Yue Zhang
Summary: This study reported a van-der-Waals barrier-free hole contact between p-type tellurene semiconductor and layered 1T'-WS2 semimetal, achieving a zero Schottky barrier height and high field-effect mobility, providing a feasible strategy for eliminating the Schottky barrier of metal-semiconductor contacts.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Byung Joo Jeong, Kyung Hwan Choi, Jiho Jeon, Sang Ok Yoon, You Kyoung Chung, Dongchul Sung, Sudong Chae, Bum Jun Kim, Seungbae Oh, Sang Hoon Lee, Chaeheon Woo, Tae Yeong Kim, Jungyoon Ahn, Jae-Hyun Lee, Joonsuk Huh, Hak Ki Yu, Jae-Young Choi
Summary: This work successfully synthesized high-quality 1D van der Waals (vdW) Nb2Pd3Se8, demonstrating excellent transport characteristics of field effect transistors (FETs) at different temperatures.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Physical
Z. H. Li, J. N. Han, S. G. Cao, Z. H. Zhang
Summary: The construction of graphene/MoSi2X4 (X=N, P, As) van der Waals heterojunctions and their systematic investigation reveal that these heterojunctions have low Schottky barrier height and better electrical contact behavior. Vertical strain and electric field regulations can achieve more ideal electrical contacts, and physical regulations can induce high-concentration carrier doping in graphene, providing new possibilities for the design of graphene/MoSi2X4-based high-gain transistors. These heterojunctions also possess a reasonable Poisson ratio and high stiffness features, making them suitable for electrode and nano-device materials.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Tao Shen, Jia Liu, Xinyi Liu, Peng Cheng, Ji-Chang Ren, Shuang Li, Wei Liu
Summary: In this study, a generalized model is proposed to reveal the relationship between interfacial electrostatic screening and the modulation of Schottky barrier height in 2D metal-semiconductor junctions (MSJs). By combining the model with thermionic field emission theory, several compatible 2D metals for low-dimensional electronics are identified.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Xiankun Zhang, Zhuo Kang, Li Gao, Baishan Liu, Huihui Yu, Qingliang Liao, Zheng Zhang, Yue Zhang
Summary: An effective molecule optimization strategy has been reported to upgrade van der Waals (vdWs) contacts, achieving near-zero Schottky barriers and creating high-performance electronic devices. The strategy induces defect healing effect and enhances hole density in p-type semiconductors, effectively thinning the Schottky barrier width and improving carrier interface transmission efficiency. The optimized contacts demonstrate an ultrathin Schottky barrier width and outstanding contact resistance, leading to an ultrahigh field-effect mobility in WSe2 flakes.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Hang Yan, Yang Li, Jing-Kai Qin, Bo Xu, Ping-An Hu, Liang Zhen, Cheng-Yan Xu
Summary: Two-dimensional organic crystals show promising potential for high-performance nanoelectronics, but are limited by strong Fermi level pinning effects and large Schottky barriers between organic semiconductors and metals. By introducing 2D metallic 1T-TaSe2 with matched band-alignment as electrodes, enhanced field-effect characteristics and improved optoelectronic performance of F16CuPc nanoflake-based phototransistors are achieved, surpassing reported organic photodetectors and phototransistors.
Article
Nanoscience & Nanotechnology
Che-Yi Lin, Mu-Pai Lee, Yuan-Ming Chang, Yi-Tang Tseng, Feng-Shou Yang, Mengjiao Li, Jiann-Yeu Chen, Ciao-Fen Chen, Meng-Yu Tsai, Yi-Chun Lin, Keiji Ueno, Mahito Yamamoto, Shun-Tsung Lo, Chen-Hsin Lien, Po-Wen Chiu, Kazuhito Tsukagoshi, Wen-Wei Wu, Yen-Fu Lin
Summary: This research demonstrates that diffused electron beam energy (DEBE) treatment can lower the Schottky barrier height and enable direct writing of electrical circuitry on van der Waals semiconductors. DEBE allows for selective-area doping, enabling the formation of both n-type and p-type doped channels within the same atomic plane, resulting in nonvolatile and homogeneous devices.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Jinbo Bian, Zhiping Xu
Summary: In this work, a novel vertical strain engineering approach is proposed to modify the band structures and electronic coupling of 2D materials in heterostructures. This has significant implications for improving electronic transport and energy conversion efficiency in nanoelectronics.
Article
Chemistry, Multidisciplinary
Lei Xu, Yun-Yuan Wang, Chih-Hsiang Hsiao, I-Chih Ni, Mei-Hsin Chen, Chih- Wu
Summary: A novel van der Waals heterostructure field-effect transistor using van der Waals stacking as the next-generation device architecture is demonstrated in this study. The MoS2/WS2 heterostructure FET shows significant improvement in drain current and field-effect mobility mainly due to charge-transfer effect, as well as reduction in Schottky barrier height at the contact interface. The WS2/MoS2/WS2 double heterostructure FETs further enhance mobility at both room temperature and lower temperature, indicating potential for further enhanced electrical performance.
ADVANCED MATERIALS INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Yu-Han Wu, Jia-Cheng Luo, Jing Zhang, Zi-Cheng He, Yu Lan, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang
Summary: This article proposes a novel strategy of functionalization and external electric fields to tune the metal-semiconductor contact nature in MXene-based vdW heterostructures. It reveals the potential of MXenes in future nanoelectronics and optoelectronics.
RESULTS IN PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Yunfeng Chen, Yang Wang, Zhen Wang, Yue Gu, Yan Ye, Xuliang Chai, Jiafu Ye, Yan Chen, Runzhang Xie, Yi Zhou, Zhigao Hu, Qing Li, Lili Zhang, Fang Wang, Peng Wang, Jinshui Miao, Jianlu Wang, Xiaoshuang Chen, Wei Lu, Peng Zhou, Weida Hu
Summary: Band-engineered van der Waals heterostructures are able to construct high room-temperature detectivity detectors for visible light and blackbody infrared light by blocking dark current without suppressing photocurrent. Utilizing two-dimensional materials with self-passivated surfaces and tunable band structures, unipolar barriers can be designed to avoid lattice mismatch and interface defects, achieving low dark current and high detectivity in photodetectors.
NATURE ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Xuxuan Yang, Lihang Qu, Feng Gao, Yunxia Hu, Huan Yu, Yunxia Wang, Mengqi Cui, Yunxiao Zhang, Zhendong Fu, Yuewu Huang, Wei Feng, Bin Li, PingAn Hu
Summary: In this study, ultrathin 2D Bi2O2S nanosheets were successfully synthesized and used to fabricate PEC photodetectors with excellent performance. The photodetectors exhibited a broad photoresponse spectrum, high responsivity, fast response times, and good long-term stability, and could function as self-powered broadband photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Mingjin Dai, Chongwu Wang, Ming Ye, Song Zhu, Song Han, Fangyuan Sun, Wenduo Chen, Yuhao Jin, Yunda Chua, Qi Jie Wang
Summary: PTE detectors offer the potential for ultra-broadband photodetection at room temperature without an external power supply, but their performance in the LWIR regime still requires improvement in terms of speed, responsivity, and noise level. A high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe2) with asymmetric van der Waals contacts demonstrates excellent responsivity and response time, showing sensitivity to linear polarization angles.
Article
Chemistry, Physical
Wenhai Wang, Ruolan Mei, Qixiao Zhao, Cong Liu, Hongyu Chen, Shichen Su, Shuangpeng Wang
Summary: Polymeric carbon nitride (PCN) has great potential applications in various fields, but efficient phosphorescence is rare due to the lack of an effective synthetic method and an unsettled phosphorescent mechanism. In this study, a strategy to promote efficient phosphorescence by introducing S and N elements was reported. PCN with enhanced phosphorescence was successfully synthesized by introducing C=S and C N groups.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Peiting Wen, Li Zhang, Wei Gao, Qian Yue, Hanyu Wang, Ying Huang, Jing Wu, He Yu, Hongyu Chen, Nengjie Huo, Jingbo Li
Summary: This study presents a novel gate-tunable lateral homojunction of MoTe2, which enables broad-spectrum photodetection and conversion of light signals to electrical signals through gate modulation. The structure exhibits excellent optoelectronic properties, offering a new pathway for potential development in computational sensors and logic optoelectronics.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Huihui Yang, Lili Wang, Heyan Wang, Yilei Zhang, Zhen Su, Ziyi Su, Jia Zhang, Zhengang Lu, Dechang Jia, PingAn Hu
Summary: The authors have successfully developed a flexible transparent EMI film with ultrahigh electromagnetic shielding effectiveness using large-area single crystal graphene, which surpasses the performance of other known materials.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Chemistry, Multidisciplinary
Xuxuan Yang, Xin Liu, Lihang Qu, Feng Gao, Yi Xu, Mengqi Cui, Huan Yu, Yunxia Wang, PingAn Hu, Wei Feng
Summary: This study demonstrates high-performance self-powered photoelectrochemical (PEC) photodetectors based on ultrathin InSe nanosheets. The electrical properties and photoresponse of the photodetectors are improved by annealing treatment. The self-powered PEC photodetectors show broadband photoresponse, high responsivity, fast response speed, and good stability under UV-NIR irradiation. The photoresponse can be effectively tuned by the concentration and kind of electrolyte.
Article
Chemistry, Multidisciplinary
Shichao Zhang, You Wu, Feng Gao, Huiming Shang, Jia Zhang, Zhonghua Li, YongQing Fu, PingAn Hu
Summary: This study presents a new strategy to improve the performance of 2D material-based devices by combining metallic and semiconducting polymorphs of transition-metal dichalcogenides. The phase engineering method successfully achieves heterophase-based FETs with low contact resistance, which are used for detecting NH3 gas concentration.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Optics
Fangyuan Sun, Jinghao LI, Kian Hua Tan, Satrio Wicaksono, Yun Da Chua, Chongwu Wang, Mingjin Dai, Voo Qin Gui Roth, Soon Fatt Yoon, Qi Jie Wang
Summary: We present a cost-efficient method for beam combining of five laser elements in an array of tunable slot waveguide quantum cascade lasers in the mid-infrared region. By using an aspherical lens and five fine-tuned mini mirrors, the individual beams from the laser array were collimated into a single beam. The feasibility of this approach was verified by coupling the combined beams into a hollow-core fiber gas cell for simultaneous gas sensing of ammonia and ethylene.
Article
Chemistry, Multidisciplinary
Huiming Shang, Yunxia Hu, Feng Gao, Mingjin Dai, Shichao Zhang, Shuai Wang, Decai Ouyang, Xinyu Li, Xin Song, Bo Gao, Tianyou Zhai, PingAn Hu
Summary: This study presents a high-gain photodetector based on a vertical InSe/GaSe heterojunction. By inducing carrier recirculation, the device achieves improved optoelectronic performance and sensitivity. The heterojunction also exhibits the ability to detect weaker light, highlighting its potential for various applications.
Article
Chemistry, Physical
Huiming Shang, Feng Gao, Mingjin Dai, YunXia Hu, Shuai Wang, Bo Xu, Peng Wang, Bo Gao, Jia Zhang, PingAn Hu
Summary: A self-powered photodetector with light-induced electric field enhancement based on a 2D InSe/WSe2/SnS2 van der Waals heterojunction is designed, which achieves high responsivity and fast response speed by utilizing the light-induced electric field.
Article
Chemistry, Multidisciplinary
Hongying Yang, Yunxia Hu, Xin Zhang, Yanan Ding, Shuai Wang, Zhen Su, Yong Shuai, Pingan Hu
Summary: A two-terminal NIR synaptic device based on a multilayer MoSe2 moiré superlattice is reported in this study, demonstrating strong sensing and storage functions similar to the human visual system. The interlayer coupling of multilayer MoSe2 is significantly enhanced by the moiré structure, enabling NIR light response and absorption. This research opens up new possibilities for the realization of NIR artificial retina and bionic eye based on 2D materials.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Jiayue Han, Fakun Wang, Yue Zhang, Wenjie Deng, Mingjin Dai, Fangchen Hu, Wenduo Chen, Jieyuan Cui, Chaoyi Zhang, Song Zhu, Chongwu Wang, Ming Ye, Song Han, Yu Luo, Tianyou Zhai, Jun Wang, Qi Jie Wang
Summary: Detecting and distinguishing light polarization states is of significant importance in scientific studies and industry applications. In this study, a broadband polarization photodetector with high PRs and wavelength-dependent polarities using a 2D anisotropic/isotropic Nb2GeTe4/MoS2 van der Waals heterostructure is demonstrated, showing effectiveness in polarized communication and imaging.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Shan Huang, Hongyu Chen, Sujuan Wang, Yang Chen, Jianfeng He, Wenhai Wang, Yuan Pan, Yunpeng Zhao, Ligan Qi, Shichen Su
Summary: Based on charge-polarity control, a novel anti-ambipolar heterotransistor was proposed using a special In2Se3 & WSe2 van der Waals heterostructure. It can reversibly change polarity between anti-ambipolar and P-type by treating an optical signal as an input. The device's charge neutrality point can be selectively varied with changes in laser power density, and it exhibits a high I-on/I-off ratio, making it suitable for future optoelectronic circuits.
Article
Chemistry, Physical
Ying Wei, Xiao Liu, Yu Miao, Yuxin Liu, Chuanglei Wang, Xiangjing Ying, Gaotian Zhang, Huaimin Gu, Menglong Zhang, Hongyu Chen
Summary: By decorating CsPbBr3 NWs with CdS@CdxZn1-xS QDs, the responsivity of perovskite-based photodetectors can be greatly enhanced. The unique energy level structure of CdS@CdxZn1-xS QDs is favorable for light-harvesting and photocarrier separation.
NANOSCALE HORIZONS
(2022)