Large area vertical aligned MoS2 layers toward the application of thin film transistor

标题
Large area vertical aligned MoS2 layers toward the application of thin film transistor
作者
关键词
Molybdenum disulfide, Thin films, Vertical aligned, Sputtering, Thin film transistor
出版物
MATERIALS LETTERS
Volume 250, Issue -, Pages 64-67
出版商
Elsevier BV
发表日期
2019-04-29
DOI
10.1016/j.matlet.2019.04.117

向作者/读者发起求助以获取更多资源

Reprint

联系作者

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started