Article
Physics, Applied
Rihui Yao, Xiao Fu, Xiaoqing Li, Tian Qiu, Honglong Ning, Yuexin Yang, Xubing Lu, Xiuhua Cao, Yu Chen, Junbiao Peng
Summary: Indium-gallium-zinc-oxide thin film transistors were successfully fabricated in this study, with Ga-doped ZnO films prepared as source/drain electrodes at room temperature. The electrical properties of the TFTs showed an increase followed by a decrease with the increase of Ga doping content, and the optimal performance was achieved at 2 wt.% Ga2O3 doping. The devices also exhibited good electrical stability under dark conditions for a duration of 5400 s.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Haixu Liu, Hui Li, Junlei Tao, Jia Liu, Jinzheng Yang, Junjie Li, Jianmin Song, Jie Ren, Min Wang, Shaopeng Yang, Xin Song, Yanfeng Wang
Summary: This study developed a preparation scheme for AlF3 and GaF3 co-doped ZnO thin films using magnetron sputtering. The theoretical calculations and experimental results showed that the prepared FAGZO films had high electron mobility, low resistivity, and wide spectrum transmission performance. Moreover, the application of FAGZO films in perovskite solar cells demonstrated improved photocurrent density and power conversion efficiency compared to the reference film.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Jihun Kim, Jun Sung Jang, Seung Wook Shin, Hyeonghun Park, Woo-Lim Jeong, Seung-Hyun Mun, Jung-Hong Min, Jiyoung Ma, Jaeyeong Heo, Dong Seon Lee, Jung-Je Woo, Jin Hyeok Kim, Hyeong-Jin Kim
Summary: In this study, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) was successfully applied for the first time in Cu2ZnSn(S,Se)(4) (CZTSSe) thin-film solar cells (TFSCs). The MGZO material showed wide optical spectrum, high transmittance, and low electrical resistance, leading to increased photon harvesting and electron collection rate. The LGO ETL prevented plasma-induced damage to the CdS buffer and improved the V-oc of the CZTSSe TFSCs. The MGZO/LGO TE/ETL combination achieved a higher power conversion efficiency of 10.67% compared to the conventional AZO/intrinsic ZnO (8.33%).
Article
Engineering, Environmental
Athorn Vora-ud, Anh Tuan Thanh Pham, Dai Cao Truong, Somporn Thoawankeaw, Hoa Thi Lai, Thu Bao Nguyen Le, Nhat Minh Quang Tran, Mekhala Insawang, Pennapa Muthitamongkol, Mati Horprathum, Manish Kumar, Sungkyun Park, Gerald Jeffrey Snyder, Tosawat Seetawan, Thang Bach Phan
Summary: In this study, the thermoelectric properties of Ga and In doped ZnO films (IGZO) deposited on a polyimide substrate were reported, along with the fabrication of 4-unileg flexible IGZO thermoelectric devices. The best power factor was achieved in the IGZO film annealed at 250 degrees C. The practical application of flexible IGZO films was demonstrated through a 4-unileg-IGZO films thermoelectric module.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Materials Science, Multidisciplinary
Himadri Sekhar Das, Rajesh Das, Prasanta Kumar Nandi, Sajal Biring, Subir Kumar Maity
Summary: The study demonstrates that Ga-doped ZnO thin films can serve as a promising alternative anode material in OLEDs, replacing ITO and SnO2:F films. Experimental results show that ZnO:Ga films exhibit excellent performance in terms of transparency and electrical properties, suitable for OLEDs and other optoelectronic devices.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Chemistry, Analytical
M. Toma, R. Domokos, C. Lung, D. Marconi, M. Pop
Summary: This article describes the influence of deposition parameters on the structural, morphological, optical, and electrical properties of ZnO thin films doped with Ga and co-doped with (Ga + Nd). The thin films were fabricated using RF magnetron sputtering with a power of 100 W and a deposition distance of 6 cm. XRD analysis was used to analyze the influence of doping on the film structure. Optical transmission measurements showed a decrease in transparency when dopants were added, and AFM analysis revealed that the type of doping affected the microstructure of the films. Raman and resistivity measurements confirmed successful incorporation of dopants into the ZnO host material.
ANALYTICAL LETTERS
(2023)
Article
Multidisciplinary Sciences
R. C. Ramola, Sandhya Negi, Ravi Chand Singh, Fouran Singh
Summary: The gas sensing performance of ion beam induced modified gallium doped zinc oxide thin films was studied. The sensitivity of the films was improved by ion irradiation, especially with Si6+ ions. The gas sensing response increased with higher concentrations of ethanol and acetone gases.
SCIENTIFIC REPORTS
(2022)
Article
Chemistry, Multidisciplinary
R. C. Ramola, Sandhya Negi, Mukesh Rawat, R. C. Singh, Fouran Singh
Summary: Zinc oxide (ZnO) is a versatile material with high thermal conductivity, electron mobility, wide band gap, and exciton binding energy, making it suitable for various device applications. Among these applications, gallium-doped ZnO thin films annealed at 700 degrees Celsius show the highest sensitivity and shortest response and recovery time for ethanol and acetone gases, demonstrating the potential for gas sensing applications.
Article
Materials Science, Ceramics
Thong Q. Trinh, Tinh T. Nguyen, Doanh V. Vu, Dang H. Le
Summary: The study investigated n-type GZO/rGO thin-film nanocomposites, where rGO acted as a bridge to improve electron transport and enhance thermoelectric performance. The electrical conductivity and power factor of the samples increased by four to five times compared to rGO-free samples, showing promising potential for applications.
CERAMICS INTERNATIONAL
(2021)
Article
Chemistry, Multidisciplinary
Victor V. Petrov, Irina O. Ignatieva, Maria G. Volkova, Irina A. Gulyaeva, Ilya V. Pankov, Ekaterina M. Bayan
Summary: Transparent Al-doped ZnO films were synthesized by solid-phase pyrolysis and characterized by XRD, SEM, and TEM. The films exhibit wurtzite structure and have a uniform distribution of nanoparticles. The introduction of 1% Al results in a narrowed band gap and improved response time to radiation.
Article
Materials Science, Multidisciplinary
H. H. Gullu, M. Isik, N. M. Gasanly, M. Parlak
Summary: This study focuses on the structural and optical properties of gallium-doped zinc oxide thin films grown by magnetron sputtering technique. The results revealed changes in band gap energy with temperature, analyzed using models, and determined the room temperature band gap and Urbach energies from absorption analysis.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Alexandr Cocemasov, Vladimir Brinzari, Do-Gyeom Jeong, Ghenadii Korotcenkov, Sergiu Vatavu, Jong S. Lee, Denis L. Nika
Summary: A study was conducted on the thermal conductivity of indium-tin-oxide (ITO) thin films with various gallium (Ga) concentrations (0-30 at. %) deposited by spray pyrolysis technique. It was found that Ga doping led to a nonlinear decrease in thermal conductivity, with structural transformation affecting the thermal conductivity, and hybridized metal atom vibrations playing a key role in the decrease of thermal conductivity.
Article
Chemistry, Analytical
Minho Yoon
Summary: This study investigates the effects of disorder on the subthreshold characteristics of atomically deposited ZnO thin-film transistors (TFTs). It is found that the charge-transport characteristics of the disordered TFTs are severely affected by localized trap states, resulting in gate-voltage-dependent degradation. By considering the disorderedness factors as gate-dependent power laws, a subthreshold current-voltage relationship is derived for disordered semiconductors. The disorderedness parameters obtained from this relationship are consistent with those obtained by the gm/Ids method.
Article
Optics
H. Elhosiny Ali, V Ganesh, L. Haritha, A. M. Aboraia, H. H. Hegazy, V Butova, Alexander Soldatov, H. Algarni, A. Guda, H. Y. Zahran, Yasmin Khairy, I. S. Yahia
Summary: Pure zinc oxide and gallium-doped ZnO films were deposited on a glass substrate using a sol-gel assisted spin coating technique. The films were characterized for their structural, morphological, and optical properties, with an emphasis on the effects of doping. Doping was shown to lead to enhancements in linear optical properties and transparency, making the films useful for various optical device applications.
OPTICS AND LASER TECHNOLOGY
(2021)
Article
Chemistry, Physical
Giovanna Latronico, Saurabh Singh, Paolo Mele, Abdalla Darwish, Sergey Sarkisov, Sian Wei Pan, Yukihiro Kawamura, Chihiro Sekine, Takahiro Baba, Takao Mori, Tsunehiro Takeuchi, Ataru Ichinose, Simeon Wilson
Summary: The addition of 2% SnO2 significantly enhances the thermoelectric performance of AZO thin films on silica substrates, particularly in terms of power factor. Compared to typical AZO materials, the thermal conductivity is significantly reduced.
Article
Engineering, Electrical & Electronic
H. H. Gullu, O. Bayrakli Surucu, M. Isik, M. Terlemezoglu, M. Parlak
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2020)
Article
Engineering, Electrical & Electronic
H. H. Gullu, M. Isik, O. Surucu, N. M. Gasanly, M. Parlak
Summary: This study investigated the structural, optical, and band gap characteristics of thermally evaporated CdSe thin films, showing preferential orientation and a Cd/Se ratio close to 1.0. Temperature-dependent band gap properties were explored for the first time, with the direct band gap energy decreasing from 1.750 eV to 1.705 eV. The Varshni model was successfully applied, and various optical constants were determined, providing valuable data for researchers studying optoelectronic device applications of CdSe thin films.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
O. Surucu, M. Isik, M. Terlemezoglu, N. M. Gasanly, M. Parlak
Summary: This study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films, including their crystalline structure, atomic compositional ratio, and temperature-tuned bandgap energy characteristics. The direct bandgap energy of the In2S3 thin films was found to decrease with increasing measurement temperature, as revealed through analysis of transmittance spectra.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Physical
Aysenur Gencer, Sezgin Aydin, Ozge Surucu, Xiaotian Wang, Engin Deligoz, Gokhan Surucu
Summary: In this study, the hydrogen storage properties of Li-decorated Hf2CF2 MXene layer were investigated using first-principles calculations. The results show that the Li-decorated layer exhibits stable and convenient adsorption characteristics, making it a promising candidate for hydrogen storage applications.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Esra Yukselturk, Ozge Surucu, Makbule Terlemezoglu, Mehmet Parlak, Semsettin Altindal
Summary: The study investigated the I-V characteristics of the fabricated In/In2S3/p-Si photodiode under different illumination intensities, observed two linear regions in the forward-bias ln(I)-V plots, and found that the ideality factor of the diode increased with increasing illumination intensity while the barrier height decreased. The photodiode's photoresponse, photoresponsivity, and specific detectivity were calculated as a function of the illumination.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
M. Terlemezoglu, O. Surucu, M. Isik, N. M. Gasanly, M. Parlak
Summary: Nickel oxide thin films were deposited using the radio frequency magnetron sputtering technique. The structural and morphological properties of the films were analyzed using X-ray diffraction (XRD), scanning electron microscopy, and energy-dispersive X-ray analysis. The films were found to have a cubic phase of nickel oxide with a preferential orientation of (200) direction, and the surface morphology was observed to be uniform and smooth. Optical properties of the films were studied using Raman spectroscopy and temperature-dependent transmittance spectroscopy, and the band gap energy of the films was obtained using Tauc relation and derivative spectroscopy techniques. Furthermore, the relationship between the band gap energy and temperature was investigated using the Varshni optical model, and the absolute zero band gap energy, rate of change of band gap energy, and Debye temperature were determined as 3.57 eV, - 2.77 x 10(-4) eV/K, and 393 K, respectively.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Chemistry, Physical
A. Gencer, O. Surucu, D. Usanmaz, R. Khenata, A. Candan, G. Surucu
Summary: This study investigates the structural, electronic, magnetic, mechanic, and dynamic properties of TiVFeZ (Z=Al, Si, Ge) equiatomic quaternary Heusler compounds (EQHCs), revealing their potential as materials for spintronic applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
G. Surucu, A. Gencer, O. Surucu, D. Usanmaz, A. Candan
Summary: This paper investigates the structural, magnetic, electronic, mechanic, and lattice dynamic properties of three equiatomic quaternary Heusler compounds under pressure effect. The compounds exhibit half-metal and spin gapless semiconductor nature, making them promising materials for spintronics applications.
MATERIALS TODAY COMMUNICATIONS
(2021)
Article
Engineering, Electrical & Electronic
T. Bektas, M. Terlemezoglu, O. Surucu, M. Isik, M. Parlak
Summary: This paper reports the structural and optical properties of Sn1-xSbxSe (x = 0.4) layered single crystals grown by the vertical Bridgman method. The crystal structures and layered characteristics were observed using X-ray diffraction and scanning electron microscopy. The optical properties were revealed through Raman, ellipsometry, and transmission measurements, indicating that Sn1-xSbxSe (x = 0.4) layered single crystals could have potential applications in photovoltaics and optoelectronics.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Materials Science, Multidisciplinary
O. Surucu, M. Isik, M. Terlemezoglu, T. Bektas, N. M. Gasanly, M. Parlak
Summary: CuSbSe2 thin film was prepared by co-evaporation, and its structural, morphological, and optical properties were investigated. The film exhibited an orthorhombic crystalline structure with a nearly uniform surface. The optical analysis showed a small band gap energy and a room temperature direct band gap.
Article
Materials Science, Multidisciplinary
Tunc Bektas, Ozge Surucu, Makbule Terlemezoglu, Mehmet Parlak
Summary: In this study, Sn-Sb-Se thin films were deposited by thermal evaporation and the effect of annealing on the films' structural, optical, and electrical properties were investigated. XRD measurement revealed that annealing at 300 degrees C resulted in the best crystalline quality, and structural parameters were determined using XRD data. SEM and AFM measurements showed surface deformation after annealing at 400 degrees C. UV-Vis spectroscopy measurement demonstrated a high absorption coefficient, indicating a direct band gap. The band gap and activation energies of the as-grown sample were determined to be 1.59 eV and 106.1 meV, respectively. The results of SEM, AFM, XRD, Raman, UV-Vis spectroscopy, and temperature-dependent photoconductivity measurements were discussed throughout the paper.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2023)
Article
Chemistry, Multidisciplinary
Gokhan Surucu, Aysenur Gencer, Ozge Surucu, Md. Ashraf Ali
Summary: The Li5AuP2 compound is studied in detail to investigate its unique chemical properties of gold. Pressure is applied to reveal its structural, mechanical, electronic, and dynamical properties. The thermal, electronic, and optical properties of the compound are obtained and analyzed. This study provides valuable information for future research on gold chemistry.
Article
Materials Science, Multidisciplinary
M. Isik, O. Surucu, N. M. Gasanly
Summary: GaSe0.75S0.25, as a potential semiconductor compound, shows hexagonal structure and has a band energy of 2.34 eV. The GaSe0.75S0.25 thin film grown on a glass substrate was also successfully obtained on a silicon wafer, forming a p-GaSe0.75S0.25/n-Si heterojunction. Temperature-dependent current-voltage (I-V) measurements were conducted to characterize the electrical properties of the heterojunction, revealing a decrease in the ideality factor and an increase in the barrier height with increasing temperature. The conduction mechanism was investigated considering the Gaussian distribution of barrier height inhomogeneity.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2023)
Article
Multidisciplinary Sciences
Tugce Sevinc Dag, Gokhan Surucu, Aysenur Gencer, Ozge Surucu, Faruk Ozel, Yasemin Ciftci
Summary: This study investigates the photocatalytic water splitting performance of NixW6Se8(x=1,2,3,4) Chevrel phases. Density Functional Theory (DFT) is used to study the electronic properties and stability of NiW6Se8 and Ni2W6Se8 compounds. It is found that NiW6Se8 is suitable for both reduction and oxidation reactions, while Ni2W6Se8 is only suitable for the reduction reaction. This study is the first attempt to study Chevrel phases in detail and identify a suitable compound for photocatalytic water splitting.
ADVANCED THEORY AND SIMULATIONS
(2023)
Article
Chemistry, Physical
Guangqian Ding, Tingting Sun, Gokhan Surucu, Ozge Surucu, Aysenur Gencer, Xiaotian Wang
Summary: This study reports the coexistence of open and closed nodal line phonons in two realistic solids and demonstrates the formation of a complex nodal structure in momentum space. Phononic surface states occur in the projected surfaces, benefiting experimental detection. The results are considered a breakthrough in demonstrating the coexistence of different nodal line states in phonons.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2022)
