期刊
VACUUM
卷 165, 期 -, 页码 172-178出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2019.04.017
关键词
PECVD; Silicon-nitride; Thin film; Process parameter; Residual gas
Large-area silicon-nitride thin films deposited from silane and ammonia by plasma-enhanced chemical vapor deposition are investigated experimentally in a 300 mm apparatus with a vertical showerhead. The responses of deposition rate and refractive index to the process parameters are found and discussed. The effects of shower-head configuration on the full-wafer deposition rate and refractive index are further examined, and the inherent non-uniformity is improved by using a proper convex showerhead. The residual gases are analyzed online, and a good correlation between the partial pressure of hydrogen and the deposition rate is found.
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