A method for simulating the influence of grain boundaries and material interfaces on electromigration

标题
A method for simulating the influence of grain boundaries and material interfaces on electromigration
作者
关键词
Electromigration, Modeling and simulation, TCAD, Nano-interconnects, Copper, Back-end-of-line, Reliability
出版物
MICROELECTRONICS RELIABILITY
Volume 97, Issue -, Pages 38-52
出版商
Elsevier BV
发表日期
2019-05-03
DOI
10.1016/j.microrel.2019.04.005

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