Large enhancement of piezoelectric properties and resistivity in Cu/Ta co-doped Bi4Ti3O12 high-temperature piezoceramics

In this study, the electrical properties of Bi4Ti3O12-based Aurivillius-type ceramics were tailored by a B-site co-doping strategy combining high valence Ta5+ and low valence Cu2+. A series of Bi4Ti3-x(Cu1/3Ta2/3)(x)O-12 (BTCT) (x = 0, 0.005, 0.01, 0.015, 0.02, 0.025, and 0.03) ceramics were prepared by the conventional solid-state reaction method. The effect of Cu/Ta co-doping on the crystal structure, microstructure, dielectric properties, piezoelectric properties, ferroelectric properties, and electrical conductivity of these ceramics was systematically investigated. Co-doping significantly enhanced the piezoelectric properties and DC electrical resistivity of the resulting composites. The optimized comprehensive performances were obtained at x = 0.015 with a large piezoelectric coefficient (34 pC/N) and a relatively high resistivity of 9.02 x 10(6) omega cm at 500 degrees C. Furthermore, the ceramic also exhibited stable thermal annealing behaviors and excellent fatigue resistance. The results of this study demonstrated great potential of the Cu/Ta co-doped Bi4Ti3O12 ceramics for high-temperature piezoelectric device applications.